Publication detail

Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device

Andrey Denisyuk, Tomáš Hrnčíř, Jozef Vincenc Oboňa, Sharang, Martin Petrenec, Jan Michalička

Original Title

Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device

Type

journal article in Web of Science

Language

English

Original Abstract

We report on the mitigation of curtaining artifacts during transmission electron microscopy (TEM) lamella preparation by means of a modified ion beam milling approach, which involves altering the incident angle of the Ga ions by rocking of the sample on a special stage. We applied this technique to TEM sample preparation of a state-of-the-art integrated circuit based on a 14-nm technology node. Site-specific lamellae with a thickness <15 nm were prepared by top-down Ga focused ion beam polishing through upper metal contacts. The lamellae were analyzed by means of high-resolution TEM, which showed a clear transistor structure and confirmed minimal curtaining artifacts. The results are compared with a standard inverted thinning preparation technique.

Keywords

TEM sample lamella integrated circuit FinFET device

Authors

Andrey Denisyuk, Tomáš Hrnčíř, Jozef Vincenc Oboňa, Sharang, Martin Petrenec, Jan Michalička

Released

17. 6. 2017

ISBN

1431-9276

Periodical

MICROSCOPY AND MICROANALYSIS

Year of study

23

Number

3

State

United States of America

Pages from

484

Pages to

490

Pages count

10

URL

https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/mitigating-curtaining-artifacts-during-ga-fib-tem-lamella-preparation-of-a-14-nm-finfet-device/072B2738731C7CE8D6680EF27CC69797

BibTex

@article{BUT149572,
  author="Jan {Michalička}",
  title="Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device",
  journal="MICROSCOPY AND MICROANALYSIS",
  year="2017",
  volume="23",
  number="3",
  pages="484--490",
  doi="10.1017/S1431927617000241",
  issn="1431-9276",
  url="https://www.cambridge.org/core/journals/microscopy-and-microanalysis/article/mitigating-curtaining-artifacts-during-ga-fib-tem-lamella-preparation-of-a-14-nm-finfet-device/072B2738731C7CE8D6680EF27CC69797"
}