Detail publikačního výsledku

TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)

KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BAUER, P., ŠIKOLA, T.

Original Title

TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)

English Title

TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)

Type

Paper in proceedings (conference paper)

Original Abstract

In-situ monitoring of thin Ga and GaN layers growth and TOF-LEIS structural analysis.

English abstract

In-situ monitoring of thin Ga and GaN layers growth and TOF-LEIS structural analysis.

Key words in English

TOF-LEIS, Ga, GaN,

Authors

KOLÍBAL, M., PRŮŠA, S., BÁBOR, P., BAUER, P., ŠIKOLA, T.

Released

08.09.2003

Publisher

FÚ AV ČR

Location

Praha

Book

ECOSS 22 CD

Pages count

2

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT11087,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Petr {Bauer} and Tomáš {Šikola}",
  title="TOF-LEIS analysis of ultra thin films: Ga- and Ga-N layer growth on Si (111)",
  booktitle="ECOSS 22 CD",
  year="2003",
  pages="2",
  publisher="FÚ AV ČR",
  address="Praha"
}