Project detail

Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3

Duration: 1.4.2019 — 1.6.2019

Funding resources

Neveřejný sektor - Přímé kontrakty - smluvní výzkum, neveřejné zdroje

On the project

Electrical measurements and analysis of parameters FET transistors at Cryogenic temperatures Part 3

Keywords
cryogenycs, noise

Mark

SR18957069

Default language

English

People responsible

Holcman Vladimír, doc. Ing., Ph.D. - principal person responsible

Units

Department of Physics
- responsible department (9.11.2020 - not assigned)
Department of Physics
- beneficiary (9.11.2020 - not assigned)

Responsibility: Holcman Vladimír, doc. Ing., Ph.D.