This project was co-financed with state support of the CR Technological Agency as part of Program na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)
www.tacr.cz
Research useful for society.

Project detail

Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing

Duration: 1.1.2015 — 31.12.2017

Funding resources

Technologická agentura ČR - Program na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)

Mark

TH01010419

Default language

Czech

People responsible

Bábor Petr, doc. Ing., Ph.D. - principal person responsible

Units

Fabrication and Characteris. of Nanostr.
- responsible department (30.6.2014 - not assigned)
Fabrication and Characteris. of Nanostr.
- beneficiary (30.6.2014 - not assigned)

Responsibility: Bábor Petr, doc. Ing., Ph.D.