The objective of the study is to provide PhD education to MSc graduates in all partial fields and to create a cross-disciplinary overview of the present development, to develop theoretical foundations in the selected research area, to master the methods of scientific, to develop their creative abilities and to use them for the solution of research problems. This all should lead to a dissertation thesis, which will provide an original a significant contribution to the research status in the field of interest.

Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis.

Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis

prof. RNDr. Pavel Tománek, CSc.

1. RTS noise in MOSFETs

   The aim of this project is to determine parameters of traps in insulation layer of submicron MOSFETs by analysis of its noise characteristics, mainly RTS (random telegraph signal) noise. Experimental work is based on measurement of temperature dependence of noise using helium cryostat and study of amplitude and mean time of capture and emission as a function of electric field intensity and charge carrier concentration in channel. These results will be used to improve generation-recombination model of noise origin and localization of traps.

   Tutor: Pavelka Jan, doc. Mgr., CSc. Ph.D.