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FEKTAbbreviation: PK-FENAcad. year: 2008/2009
Programme: Electrical Engineering and Communication
Length of Study:
Profile
The objective of the study is to provide PhD education to MSc graduates in all partial fields and to create a cross-disciplinary overview of the present development, to develop theoretical foundations in the selected research area, to master the methods of scientific, to develop their creative abilities and to use them for the solution of research problems. This all should lead to a dissertation thesis, which will provide an original a significant contribution to the research status in the field of interest.
Key learning outcomes
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis.
Occupational profiles of graduates with examples
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis
Guarantor
prof. RNDr. Pavel Tománek, CSc.
Issued topics of Doctoral Study Program
The subject of the study will be the experimental observation and subsequent analysis of dielectric spectra of thin-layer oxides of titanium, niobium, tantalum, lanthanum and hafnium destined for use in field emission cathodes. Measurements of electric properties should be conducted in the frequency range 20 Hz - 3 GHz as well as in the time domain with subsequent transformation into the frequency domain. The temperature range available (with helium cryostat) is 10 K - 500 K. The objective of the study is an identification of processes occurring in cathodes during their operation and subsequently the extension of the service life of cathodes manufactured from the metals given above.
Supervisor: Liedermann Karel, doc. Ing., CSc.
The objective of the research work will be the investigation of electrical properties of polydimetylsiloxan - SiO2 systems and, in particular thin layers made from them. These systems exhibit a very low value of relative permittivity (dielectric constant, < 3,5) and thus they are promising materials for dielectric films for organic this film transistors (OTFT). The research of this topic will require experimental works related to the manufactures of samples, theoretical studies of the behaviour of polydimethylsiloxan - SiO2 systems in electric fields on a microscopic level as well as the measurement of electrical poperties of manufactured samples. Measurements will take place in the laboratory of dielectric relaxation spectroscopy at the Department of Physics, FEEC, BUT Brno, with the available frequency interval 10E-3 - 10E+9 Hz. Also available is a helium cryostat for temperature range 10 - 500 K.
The main goal of this work is to obtain experimental results on noise sources in X-ray and gamma radiation detectors based on CdTe and to determine noise equivalent power and detectivity. The mechanism of 1/f noise origin in large volume samples should be determined from the dependence of current noise spectral density on the electron gas characteristic parameters, such as charge carrier mean free path, mobility and their dependence on temperature, sample illumination and electric field intensity. The purpose of experimental work is to improve 1/f noise description and then establish new method of charge carrier mobility measurement in semiconductors, where 1/f noise is mainly generated by the fluctuation of mobility. The method of noise sources localization will be used to modify the technology of ohmic contact preparation on homogenous CdTe samples.
Supervisor: Pavelka Jan, doc. Mgr., CSc. Ph.D.
The subject of the study and research will be the determination of the true noise-free discharge current from a capacitor containing a real dielectric, and the subsequent Fourier transformation with the objective to find the frequency dependence of the complex permittivity (its imaginary part being often referred to as dielectric spectrum). The focus of the research will be on the processing of a large amount of experimental samples of a noisy discharge current, on the discrimination of noise, its definition and filtration. This part of the work will continue with the Fourier transformation of the denoised discharge current. This part will necessitate a study of the discreet Fourier transformation as well as a selection of a method that will be most suitable for the case of a non-periodical shape of the input function.
Radiation energy transfer influences significantly physical processes occuring in the plasma, it plays important role in many devices in plasma processing devices. Electric arc plasmas are utilized in number of industrial applications, e.g. in plasma metallurgy, waste treatment, plasma cutting, welding or spraying. Experimental investigation of radiation transfer is very difficult due to extreme experimental conditions - high temperature and pressure. Therefore mathematical modelling is of great importance. The goal of the work is to tstudy the approximate method of spherical harmonic functions (Pl-approximation), to compare the obtained results of radiation transfer for selected kinds of plasmas with results obtained by the method of partial characteristics, to discuss availability of both methods.
Supervisor: Bartlová Milada, doc. RNDr., Ph.D.
The target of the research is to optimalize the thickness of oxide layer on selected materials, used as emitting cathodes in electron microscopy. To compare efficiency of Schottky emission and cold emission at room temperature. To acquire, experimentally and theoretically, data on the electron work function and affinity of the cathode materials. To study the cathodes stability and lifetimes and examine their reliability by means of the noise spectroscopy.
Supervisor: Hruška Pavel, doc. RNDr., CSc.
The subject of the study and research is the existence of the phenomenon of negative dielectric loss in some types of ceramics and the use of this phenomenon in semiconductor structures containing SiO2-based thin layers. The research of this topic will require experimental works related to the manufactures of samples, theoretical studies of the behaviour of porous systems in electric fields on a microscopic level as well as the measurement of electrical poperties of manufactured ceramic samples. Measurements will take place in the laboratory of dielectric relaxation spectroscopy at the Department of Physics, FEEC, BUT Brno, with the available frequency interval 10E-3 - 10E+9 Hz. Also available is a helium cryostat for temperature range 10 - 500 K.
The main goal of this work is to analyze the influence of Poole-Frenkel and tunneling mechanisms of charge transport in thin gate oxide layer on RTS (random telegraph signal) noise. Further goals are to improve generation-recombination model of RTS noise and explain the RTS noise amplitude dependence on longitudinal and transversal electric field intensity in the channel. Theoretical model of one-dimensional and two-dimensional stochastic process should be proposed by analysis of RTS noise statistical characteristics. From the measurement of RTS noise in the temperature range 100-400K will be determined localized energetic states and GR centers in the gate insulation oxide.