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Master's Thesis
Author of thesis: Ing. Stanislav Bárdy
Acad. year: 2015/2016
Supervisor: doc. Ing. Jindřich Mach, Ph.D.
Reviewer: Ing. Rostislav Váňa
In this work we studied gallium on graphene. Depositions were done by Molecular beam epitaxy. We observed Raman enhancement and peak shifts by individual Ga islands. Simulation confirmed our assumption, that the enhancement is based on plasmonics effect that is also the main contribution of Surface-enhanced Raman spectroscopy. Another result is hydrogenation of graphene before deposition does have an effect on Ga structure and reduces diffusion length of Ga atoms.
Raman enhancement, SERS, gallium, graphene, molecular beam epitaxy
Date of defence
20.06.2016
Result of the defence
Defended (thesis was successfully defended)
Grading
A
Language of thesis
Czech
Faculty
Fakulta strojního inženýrství
Department
Institute of Physical Engineering
Study programme
Applied Sciences in Engineering (N3901-2)
Field of study
Physical Engineering and Nanotechnology (M-FIN)
Composition of Committee
prof. RNDr. Tomáš Šikola, CSc. (předseda) prof. RNDr. Miroslav Liška, DrSc. (místopředseda) prof. RNDr. Bohumila Lencová, CSc. (člen) prof. RNDr. Jiří Komrska, CSc. (člen) prof. RNDr. Petr Dub, CSc. (člen) prof. RNDr. Radim Chmelík, Ph.D. (člen) prof. RNDr. Jiří Spousta, Ph.D. (člen) prof. Ing. Ivan Křupka, Ph.D. (člen) prof. RNDr. Pavel Zemánek, Ph.D. (člen) RNDr. Antonín Fejfar, CSc. (člen) prof. RNDr. Eduard Schmidt, CSc. (člen)
Supervisor’s reportdoc. Ing. Jindřich Mach, Ph.D.
Grade proposed by supervisor: A
Reviewer’s reportIng. Rostislav Váňa
Grade proposed by reviewer: A
Responsibility: Mgr. et Mgr. Hana Odstrčilová