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Bachelor's Thesis
Author of thesis: Ing. Michal Andrýsek
Acad. year: 2015/2016
Supervisor: prof. Ing. Miroslav Kolíbal, Ph.D.
Reviewer: Ing. Zuzana Lišková, Ph.D.
This bachelor's thesis deals with preparation of surfaces with diffusion barriers for studying germanium nanowire growth. Semicondutor growth mechanism is explained as well as the role of diffusion barriers, such as graphene or aluminium oxide, during nanowire growth. Graphene was prepared using CVD method and aluminium oxide was prepared using ALD method. It is shown that nanowires could not grow on prepared samples with diffusion barriers on them.
nanowires, germanium, diffusion, graphene
Date of defence
23.06.2016
Result of the defence
Defended (thesis was successfully defended)
Grading
B
Language of thesis
Czech
Faculty
Fakulta strojního inženýrství
Department
Institute of Physical Engineering
Study programme
Applied Sciences in Engineering (B3901-3)
Field of study
Physical Engineering and Nanotechnology (B-FIN)
Composition of Committee
prof. RNDr. Tomáš Šikola, CSc. (předseda) prof. RNDr. Miroslav Liška, DrSc. (místopředseda) prof. RNDr. Bohumila Lencová, CSc. (člen) prof. RNDr. Petr Dub, CSc. (člen) prof. RNDr. Radim Chmelík, Ph.D. (člen) prof. RNDr. Jiří Spousta, Ph.D. (člen) prof. Ing. Ivan Křupka, Ph.D. (člen) prof. RNDr. Pavel Zemánek, Ph.D. (člen) RNDr. Antonín Fejfar, CSc. (člen) doc. Ing. Radek Kalousek, Ph.D. (člen)
Supervisor’s reportprof. Ing. Miroslav Kolíbal, Ph.D.
Grade proposed by supervisor: B
Reviewer’s reportIng. Zuzana Lišková, Ph.D.
Grade proposed by reviewer: B
Responsibility: Mgr. et Mgr. Hana Odstrčilová