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Bachelor's Thesis
Author of thesis: Ing. Renáta Tomková
Acad. year: 2014/2015
Supervisor: Ing. Miroslav Bartoš, Ph.D.
Reviewer: Ing. Radim Zahradníček, Ph.D.
This thesis deals with topological insulators, which are described by the quantum spin Hall effect, as well as on semiconductors, where the band structure of semiconductors and more specifically mentioned unipolar transistor MOSFET is explained. There are also mentioned primarily 2D materials and in particular of MoS2. Topic focuses on its structure, the electric properties, the use and preparation by using micromechanical exfoliation. In the last chapter it is described how to prepare MoS2 structures and their analysis. Structural properties of this material were measured by the AFM and Raman spectroscopy. The experimental part there are illustrative photograph of MoS2 taken with an optical microscope and spatial structures created by AFM.
MoS2, semiconductors, topological insulators, 2D structures, exfoliation, Raman spectroscopy.
Date of defence
25.06.2015
Result of the defence
Defended (thesis was successfully defended)
Grading
D
Language of thesis
Czech
Faculty
Fakulta strojního inženýrství
Department
Institute of Physical Engineering
Study programme
Applied Sciences in Engineering (B3901-3)
Field of study
Physical Engineering and Nanotechnology (B-FIN)
Composition of Committee
prof. RNDr. Tomáš Šikola, CSc. (předseda) prof. RNDr. Miroslav Liška, DrSc. (místopředseda) prof. RNDr. Bohumila Lencová, CSc. (člen) prof. RNDr. Jiří Komrska, CSc. (člen) prof. RNDr. Petr Dub, CSc. (člen) prof. RNDr. Radim Chmelík, Ph.D. (člen) prof. RNDr. Jiří Spousta, Ph.D. (člen) prof. Ing. Ivan Křupka, Ph.D. (člen) prof. RNDr. Pavel Zemánek, Ph.D. (člen) RNDr. Antonín Fejfar, CSc. (člen)
Supervisor’s reportIng. Miroslav Bartoš, Ph.D.
Grade proposed by supervisor: B
Reviewer’s reportIng. Radim Zahradníček, Ph.D.
Grade proposed by reviewer: B
Responsibility: Mgr. et Mgr. Hana Odstrčilová