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Bachelor's Thesis
Author of thesis: Bc. Jan Tihlařík
Acad. year: 2009/2010
Supervisor: doc. Ing. Jindřich Mach, Ph.D.
Reviewer: Ing. Stanislav Voborný, Ph.D.
This text is oriented for problems of creating ion beams. Thesis also describe the impact of ion optics to ion beam profile and preparing GaN layers. Also ion-atom source optimization and analysis of beam properties are there described. Also it was made deposition of GaN ultrathin layers on Si(111)dH at room temperature for different settings of atom-ion source electric electrodes.
atom-ion beam source, optimization, ion beam profile, preparing GaN layers
Date of defence
17.06.2010
Result of the defence
Defended (thesis was successfully defended)
Grading
B
Language of thesis
Czech
Faculty
Fakulta strojního inženýrství
Department
Institute of Physical Engineering
Study programme
Applied Sciences in Engineering (B3901-3)
Field of study
Physical Engineering and Nanotechnology (B-FIN)
Composition of Committee
prof. RNDr. Tomáš Šikola, CSc. (předseda) prof. RNDr. Miroslav Liška, DrSc. (místopředseda) prof. RNDr. Bohumila Lencová, CSc. (člen) doc. RNDr. Josef Kuběna, CSc. (člen) prof. RNDr. Jiří Komrska, CSc. (člen) prof. RNDr. Pavel Zemánek, Ph.D. (člen) prof. RNDr. Petr Dub, CSc. (člen) prof. RNDr. Radim Chmelík, Ph.D. (člen) prof. Ing. Ivan Křupka, Ph.D. (člen) prof. RNDr. Jiří Spousta, Ph.D. (člen) RNDr. Antonín Fejfar, CSc. (člen)
Supervisor’s reportdoc. Ing. Jindřich Mach, Ph.D.
Grade proposed by supervisor: B
Reviewer’s reportIng. Stanislav Voborný, Ph.D.
Grade proposed by reviewer: B
Responsibility: Mgr. et Mgr. Hana Odstrčilová