Basic knowledge of physics, mathematics and electrical circuits is required. 

Work in the laboratory is subject to a valid qualification of "instructed person", which students must obtain before starting classes.  Information on this qualification can be found in the Dean's Directive Acquainting Students with Safety Regulations. 

Credit conditions: completion of measured tasks and handing in prepared protocols in the required quality.

Exam conditions: proof of knowledge of the subject in the written and oral parts of the exam.

Point evaluation (max. 100 points): max. 30 points for work during the semester; max. 70 points per exam. The final exam consists of two parts (written and oral) and is evaluated for a total of 70 points. 

To deepen students' knowledge of the physical principles governing semiconductor devices, with a focus on quantum-mechanical and material-related aspects.

To explain the relationships between the structure of semiconductor materials and the electrical behavior of devices under various operating conditions.

To familiarize students with the design, properties, and application areas of key semiconductor components, including PN junctions, diodes, transistors (BJT, JFET, MOSFET, IGBT), and controlled power devices (thyristors, GTOs).

To develop students' ability to analyze and model semiconductor devices using simulation tools (particularly SPICE), taking into account the influence of technological parameters.

To introduce advanced semiconductor structures based on wide-bandgap materials (SiC, GaN) and their advantages for high-voltage and high-frequency applications.

To support engineering thinking in the design and optimization of electronic systems by linking physical models with technical applications.

• Programme MPC-NCP Master's 1 year of study, winter semester, compulsory
  
• Programme MPC-MEL Master's 1 year of study, winter semester, compulsory-optional