Course detail

Modern Microelectronic Devices

FEKT-MPC-MPRAcad. year: 2025/2026

The course focuses on a detailed analysis of the structure, physical principles, and electrical behavior of semiconductor devices in the context of advanced applications in microelectronics and power electronics. The content is grounded in the quantum-mechanical description of solids and the electronic properties of semiconductor materials, and it builds on the modeling and design of practical devices within electronic systems.

The course systematically covers:

  • PN junctions and diodes (including power diodes) – their nonlinear characteristics, design parameters, and application interfaces,
  • SPICE modeling of diodes, considering technological and material parameters,
  • Bipolar and unipolar transistors (BJT, JFET, MOSFET, IGBT) – their operating principles, regimes, transient behavior, and design characteristics,
  • Controlled switching devices (thyristors, GTOs) for applications in power converters,
  • Modern semiconductor structures based on wide-bandgap materials (SiC, GaN) – their advantages for high-voltage, high-frequency, and high-efficiency applications.

Emphasis is placed on the integration of physical models with simulation tools (SPICE) and the engineering interpretation of their outputs for the design and optimization of electronic components and systems.

 

Language of instruction

Czech

Number of ECTS credits

6

Mode of study

Not applicable.

Entry knowledge

Basic knowledge of physics, mathematics and electrical circuits is required. 

Work in the laboratory is subject to a valid qualification of "instructed person", which students must obtain before starting classes.  Information on this qualification can be found in the Dean's Directive Acquainting Students with Safety Regulations. 

 

Rules for evaluation and completion of the course

Credit conditions: completion of measured tasks and handing in prepared protocols in the required quality.

Exam conditions: proof of knowledge of the subject in the written and oral parts of the exam.

Point evaluation (max. 100 points): max. 30 points for work during the semester; max. 70 points per exam. The final exam consists of two parts (written and oral) and is evaluated for a total of 70 points. 

 

Aims

To deepen students' knowledge of the physical principles governing semiconductor devices, with a focus on quantum-mechanical and material-related aspects.

To explain the relationships between the structure of semiconductor materials and the electrical behavior of devices under various operating conditions.

To familiarize students with the design, properties, and application areas of key semiconductor components, including PN junctions, diodes, transistors (BJT, JFET, MOSFET, IGBT), and controlled power devices (thyristors, GTOs).

To develop students' ability to analyze and model semiconductor devices using simulation tools (particularly SPICE), taking into account the influence of technological parameters.

To introduce advanced semiconductor structures based on wide-bandgap materials (SiC, GaN) and their advantages for high-voltage and high-frequency applications.

To support engineering thinking in the design and optimization of electronic systems by linking physical models with technical applications.


Study aids

 

Prerequisites and corequisites

Not applicable.

Basic literature

BOUSEK, J. a kol., Electronic Devices, VUT. (CS)
HORÁK M.: Mikroelektronické prvky a struktury, SKRIPTUM VUT 2010 (CS)
RAZAVI, B. Fundamentals of Microelectronics (EN)

Recommended reading

Not applicable.

Classification of course in study plans

  • Programme MPC-NCP Master's 1 year of study, winter semester, compulsory
  • Programme MPC-MEL Master's 1 year of study, winter semester, compulsory-optional

Type of course unit

 

Lecture

26 hod., optionally

Teacher / Lecturer

Syllabus

      • Introduction to the subject MPR including review
      • Overview of Semiconductor Physics and Its Importance in Engineering Practice
      • Development of the Atomic Model and Fundamentals of Quantum Theory
      • Structure and Properties of Semiconductors from the Perspective of Quantum Physics and Electronics
      • PN Junction and Semiconductor Diodes – Principles, Behavior, and Technical Applications
      • Power Semiconductor Diodes – Principles, Parameters, and Application Possibilities
      • Modeling of Diodes in SPICE – Parameter Influence and Model Optimization
      • Bipolar Junction Transistor (BJT) – Principle, Characteristics, and Application Contexts
      • FET – Field-Effect Transistors and JFETs
      • MOSFET – Metal-Oxide-Semiconductor Field-Effect Transistor
      • IGBT – Insulated Gate Bipolar Transistor
      • Thyristors and GTO – Controlled Semiconductor Switches
      • New Semiconductor Devices – SiC and GaN Materials

     

    Fundamentals seminar

    13 hod., optionally

    Teacher / Lecturer

    Syllabus

    1 LC MPC MPR 2024 Diodes – Measurement of diode I-V characteristics

    2 NC MPC MPR 2024 Diodes – Calculation of diode parameters from I-V characteristics

    3 LC MPC MPR 2024 Diodes – Diode modeling

    4 LC MPC MPR 2024 Diodes – Modeling of temperature effects

    5 LC MPC MPR 2024 Transistors – Transistor measurement

    6 LC MPC MPR 2024 Transistors – Transistor modeling

     

    Exercise in computer lab

    26 hod., compulsory

    Teacher / Lecturer

    Syllabus

    1 LC MPC MPR 2024 Diodes – Measurement of diode I-V characteristics

    2 NC MPC MPR 2024 Diodes – Calculation of diode parameters from I-V characteristics

    3 LC MPC MPR 2024 Diodes – Diode modeling

    4 LC MPC MPR 2024 Diodes – Modeling of temperature effects

    5 LC MPC MPR 2024 Transistors – Transistor measurement

    6 LC MPC MPR 2024 Transistors – Transistor modeling