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Course detail
FEKT-MPC-MPRAcad. year: 2025/2026
The course focuses on a detailed analysis of the structure, physical principles, and electrical behavior of semiconductor devices in the context of advanced applications in microelectronics and power electronics. The content is grounded in the quantum-mechanical description of solids and the electronic properties of semiconductor materials, and it builds on the modeling and design of practical devices within electronic systems.
The course systematically covers:
Emphasis is placed on the integration of physical models with simulation tools (SPICE) and the engineering interpretation of their outputs for the design and optimization of electronic components and systems.
Language of instruction
Number of ECTS credits
Mode of study
Guarantor
Department
Entry knowledge
Basic knowledge of physics, mathematics and electrical circuits is required.
Work in the laboratory is subject to a valid qualification of "instructed person", which students must obtain before starting classes. Information on this qualification can be found in the Dean's Directive Acquainting Students with Safety Regulations.
Rules for evaluation and completion of the course
Credit conditions: completion of measured tasks and handing in prepared protocols in the required quality.
Exam conditions: proof of knowledge of the subject in the written and oral parts of the exam.
Point evaluation (max. 100 points): max. 30 points for work during the semester; max. 70 points per exam. The final exam consists of two parts (written and oral) and is evaluated for a total of 70 points.
Aims
To deepen students' knowledge of the physical principles governing semiconductor devices, with a focus on quantum-mechanical and material-related aspects.
To explain the relationships between the structure of semiconductor materials and the electrical behavior of devices under various operating conditions.
To familiarize students with the design, properties, and application areas of key semiconductor components, including PN junctions, diodes, transistors (BJT, JFET, MOSFET, IGBT), and controlled power devices (thyristors, GTOs).
To develop students' ability to analyze and model semiconductor devices using simulation tools (particularly SPICE), taking into account the influence of technological parameters.
To introduce advanced semiconductor structures based on wide-bandgap materials (SiC, GaN) and their advantages for high-voltage and high-frequency applications.
To support engineering thinking in the design and optimization of electronic systems by linking physical models with technical applications.
Study aids
Prerequisites and corequisites
Basic literature
Recommended reading
Classification of course in study plans
Lecture
Teacher / Lecturer
Syllabus
Fundamentals seminar
1 LC MPC MPR 2024 Diodes – Measurement of diode I-V characteristics
2 NC MPC MPR 2024 Diodes – Calculation of diode parameters from I-V characteristics
3 LC MPC MPR 2024 Diodes – Diode modeling
4 LC MPC MPR 2024 Diodes – Modeling of temperature effects
5 LC MPC MPR 2024 Transistors – Transistor measurement
6 LC MPC MPR 2024 Transistors – Transistor modeling
Exercise in computer lab