Czech

3

Not applicable.

Based on the knowledge gained in lectures and exercises and their verification in a written exam, the student is able to:
Describe in detail the mechanisms that act on the PN junction in the equilibrium state and in the forward voltage bias and in reverse voltage bias.
Define the barrier and diffusion capacity of the PN junction.
Explain the Shockley equation of the current voltage characteristic of the PN junction.
Explain the operation of the PN junction in the circuit connection of the rectifier, voltage stabilizer, variable capacitance diode, photodiode, luminescent diode, controlled differential resistance and diode switch.
Describe the structure of a bipolar junction transistor (BJT) and explain its operation.
Design and analyze a class A amplifier with BJT and a switch with BJT.
Describe the structure of unipolar transistor J-FET and explain its operation.
Describe the structure of unipolar transistor IGFET and explain its operation.
Design and analyze a class A amplifier with unipolar transistors and a switch with unipolar transistors.
Describe the structure of the thyristor and explain its operation on the substitution scheme.
Describe the properties of a triac and explain its use.
Define the principle of phase control of power-switching devices.
Describe the mechanisms of the interaction of radiation with a solid.
Define photometric and radiometric quantities.
Describe the arrangement of lasers and justify the benefits of their use.

The subject knowledge on the secondary school level is required.

Not applicable.

Lectures, numerical practical classes, laboratory practical classes. Teaching methods depend on the type of course unit as specified in Article 7 of BUT Rules for Studies and Examinations.

Proffesional excercises: 30 points; minimum 20 points.
Final exam: 70 points; minimum 30 points.

Basic concepts of semiconductor physics. Intrinsic and extrinsic semiconductors, electrons and holes, donors and acceptors. Concentration of charge carriers in semiconductors. Electrical conductivity of semiconductors. Diffusion of electric charge carriers. Generation and recombination of carriers in semiconductors.
PN-junction. The structure of PN junction. PN junction in equilibrium state, depletion region of PN junction, space charge, built-in voltage. PN junction in forward and reverse bias voltage. Current voltage characteristic of the PN junction.
PN-junction. Barrier and diffusion capacity of PN junction. PN junction breakdowns. Other types of semiconductor junctions, metal-semiconductor junction.
Semiconductor diode. Diode as a rectifier. Diode as a source of reference voltage. Inverse diode, tunnel diode. Schottky diode.
Semiconductor diode. Dynamic resistance of the diode, diode as controlled resistance, diode as a switch. Diode as controlled capacitance; varicap, varactor. Photodiode. PIN structure.
Technology of diodes and semiconductor structures. Point contact diode. Alloy-junction technology. Diffusion-junction technology. Planar technology. Planar-epitaxial technology.
Bipolar junction transistor (BJT). Structure, principle of operation. Normal and inverse connection of BJT. In both connections: active mode, saturation mode, CUT-OFF mode, current voltage characteristics in common emitter (CE) configuration.
Bipolar junction transistor (BJT). Class A amplifier. Configurations common emitter (CE), common base (CB), common collector (CC). Setting the operating point. Current and voltage gain. Input and output resistance.
Bipolar junction transistor (BJT). BJT as a switch, dynamic properties. Dependencies of BJT parameters on working conditions. The first and second breakdown of BJT. Limit parameters of BJT, Safe-Operating-Area (SOA).
Unipolar transistors: J-FET, structure, principle of operation. Active mode, saturation mode. Current voltage characteristics. J-FET, as a current source, as an amplifier, as a switch, as a controlled resistor.
Unipolar transistors: IGFET (MOSFET), structure, principle of operation. Depletion mode IGFET. Enhanced mode IGFET. Current voltage characteristics for both types. CMOS structure. Semiconductor memories using FET structures. CCD structure.
Multilayer devices. Thyristor: structure, substitution scheme, principle of operation. Thyristor in OFF state, in blocking state and in ON (conducting) state. Current voltage characteristics of thyristor. TRIAC, basic properties. Use of multilayer devices in control circuits.
Optoelectronic elements. Basic photometric quantities. Photoconductivity, photoresistor. Phototransistor. Light-emitting diode (LED). Laser diode. Types of Photodiodes. Photovoltaic cells.

Not applicable.

Introduce students to electronic devices and their applications and to the basic terminology in English as well as Czech.

Lectures. Professional exercises.

Not applicable.

Not applicable.

BOYLESTAD, Robert L. a Louis NASHELSKY. Electronic devices and circuit theory. 8th ed. Upper Saddle River: Prentice Hall, 2002. ISBN 0-13-094444-0. (CS)
SINGH J. Semiconductor Devices. McGraw-Hill, 1994. ISBN-10 0071139060. (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015 (CS)
BOUŠEK J., KOSINA P., MOJROVÁ B. Elektronické součástky: sbírka příkladů. FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2015. (CS)
BOUŠEK J., HORÁK M., Electronic Devices, FEKT VUT V BRNĚ, elektronické skriptum, BRNO 2006 (CS)
EMILIANO R. MARTINS , Essentials of Semiconductor Device Physics, Wiley 2022, ISBN: 978-1-119-88411-8 (CS)

Not applicable.

eLearning: currently opened course

13 hours, compulsory

eLearning: currently opened course