Course detail

Microscopy and Analysis Using Charged Particles

FSI-9ANCAcad. year: 2020/2021

The course gives a basic overview about electron and ion optical devices for microscopy and lithography. The students obtain a basic overview of charged particle optics (equation of motion, trajectory equation, aberrations in the image, determination of electromagnetic fields used particle optics and their properties, the effects of mutual interactions of particles in the beam). The sources of electron and ion beams are briefly characterized as well as the problems of generation of image and image resolution in microscopy. Finally analytical methods used in microscopy are dealt with (energy and mass spectrometers, X-ray analysis).

Language of instruction

Czech, English

Mode of study

Not applicable.

Guarantor

prof. RNDr. Bohumila Lencová, CSc.

Department

Institute of Physical Engineering (ÚFI)

Learning outcomes of the course unit

The knowledge of theoretical basis of particle optics and instrumentation for electron microscopy (imaging, analysis of samples) and technological applications of charged particle beams.

Prerequisites

Mathematics, light optics, theory of electromagnetic fields and Fourier methods on the level of MSc courses of physics or physical engineering.

Co-requisites

Not applicable.

Planned learning activities and teaching methods

The course is taught through lectures explaining the basic principles and theory of the discipline.

Assesment methods and criteria linked to learning outcomes

Oral examination with half-an-hour written preparation with possibility of using any literature. During the examination a student shows his orientation in the branch and understanding the topic.

Course curriculum

Not applicable.

Work placements

Not applicable.

Aims

The knowledge of theoretical basis of particle optics and instrumentation for electron microscopy (imaging, analysis of samples) and technological applications of charged particle beams.

Specification of controlled education, way of implementation and compensation for absences

The presence at the practices is obligatory. Absence compensation is laid down by the teacher according to the range of the absented matter.

Recommended optional programme components

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

D. B. Williams, C. B. Carter, Transmission Electron Microscopy (2nd ed.), Springer, 2009 (EN)
Eckertová, L. a Frank, L., ed., Metody analýzy povrchů. Elektronová mikroskopie a difrakce. Praha: Academia 1996
Frank, L. a Král, J., ed.: Metody analýzy povrchů. Iontové, sondové a speciální metody. Praha: Academia 2002.
L. Reimer, Scanning Electron Microscopy (2nd ed.), Springer,1998 (EN)
P. W. Hawkes and E. Kasper, Principles of Electron Optics, Vol. I a II. London: Academic Press 1989 a 1996. (EN)
S. Humphries, Jr: Charged Particle Beams. New York: J. Wiley, 1990. (EN)

Recommended reading

B. Lencová: Částicová optika, poznámky k přednášce. ÚPT AV ČR, 2000
B. Lencová_: Electron sources and beam formation for X-ray microanalysis. ČVUT Praha 2000

Classification of course in study plans

  • Programme D4F-P Doctoral

    branch D-FMI , 1 year of study, winter semester, recommended course

Type of course unit

 

Lecture

20 hod., optionally

Teacher / Lecturer

prof. RNDr. Bohumila Lencová, CSc.

Syllabus

Brief characteristics of electron and ion optical devices (microscopes, lithographs); an excursion to laboratories of the Institute of Scientific Instruments AS CR.
Foundations of charged particle optics: the motion of charged particles in homogeneous fields, explanation of the action of magnetic and electrostatic electron lens a deflector.
Trajectory equation, the determination of paraxial optical properties and aberrations. Lagrange equation, matrix methods for the determination of properties of systems.
The computation of fields needed for focusing and deflection of charged particles and determination of their optical properties. The design of electron lenses with modern CAD methods.
The sources of electrons and ions, their properties and consequences for the design of microscopes.
Beam focusing in a scanning electron microscope, the dependence of current in the probe on the probe size, detectors and analytical methods.
Specific problems of generation and processing images in a transmission electron microscope, the resolution of an image.
Analytical methods used in scanning and transmission microscopy, energy and mass spectrometers.