FEKT-KESOAcad. year: 2018/2019
Semiconductors physics. PN-junction. Semiconductor Diode. Bipolar junction transistors. Field effect transistors. Power electronic devices - thyristor, TRIAC, DIAC, IGBT transistor. Optoelectronic devices. Vacuum and microwave devices.
Learning outcomes of the course unit
Describe the arrangement of the PN junction and explain the formation of the space charge and the formation of built-in-voltage in the junction.
Describe in detail the mechanisms that affect the PN junction at steady state and in forward and reverse polarization.
Define the width of the PN junction and explain its dependence on concentration of doping impurities and applied voltage.
Define the meaning of Shockley ideal diode equation and to discuss current-voltage-characteristics of diodes including the influence of technological parameters.
Define the barrier and diffusion capacity of the PN junction.
Define and explain breakdown mechanisms of PN junction: Tunnel-breakdown, avalanche-breakdown, thermal- breakdown and surface- breakdown.
Explain the operation of PN junction in following circuits: Rectifier, voltage stabilizer, capacitance diode, photo-diode, light emitting diode (LED) and current controlled differential resistance.
Describe the structure of the bipolar transistor and explain its operation.
Design and analyze class-A-amplifier and switch with bipolar transistor.
Explain the principles and application of linear and nonlinear models of bipolar transistor.
Apply simplified linear and non-linear transistor models for the design and analysis of class-A-amplifiers and bipolar transistor switches.
Describe the structure of unipolar transistors JFET and IGFET and explain their operation.
Design and analyze class-A-amplifier and switch with unipolar transistors JFET and IGFET.
Describe the structure of a thyristor and its equivalent circuit and to explain its operation.
Describe the structure of the triac.
Explain the mechanism of switch-on-process of triac by means of positive and negative gate-current control.
Define the principle of phase control of power switching devices.
Give examples of typical wiring of circuits with thyristor and triac.
Describe the mechanisms of interaction of light with matter.
Define the differences between photometric and radiometric quantities.
Explain the mechanisms of photoluminescence and electroluminescence.
Describe the principles of different types of lasers and explain the benefits of their use.
Describe the design of the laser diode and define the conditions for its operation.
Explain the differences between the phototransistor and photodiode and describe their use.
Define the types of emission of electrons in vacuum and is able to discuss their physical mechanisms.
Explain the operation of the photomultiplier and describe its typical use.
Explain the operation of microwave tubes - klystron, traveling-wave-tube and magnetron and describe their use.
Define parasitic properties of commonly used resistors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used capacitors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Define parasitic properties of commonly used inductors and explain the impact of used materials and design to formation or suppression of these parasitic properties.
Recommended optional programme components
Boylestad R., Nashelsky L. :Electronic devices and Circuit Theory ,Prentice Hall (EN)
MUSIL V., BRZOBOHATÝ J., BOUŠEK J, PRCHALOVÁ I.: " Elektronické součástky", PC dir, BRNO, 1999 (CS)
Boušek J., Kosina P., Mojrova B.: Elektronické součástky, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P., Mojrova B.: Elektronické součástky sbírka příkladů, FEKT VUT V BRNĚ, elektronické skriptum
Boušek J., Kosina P.: Elektronické součástky BESO, laboratorní cvičení, FEKT VUT V BRNĚ, elektronické skriptum
Planned learning activities and teaching methods
Assesment methods and criteria linked to learning outcomes
Final exam – 70 points; minimum 30 points.
Language of instruction
2. Junctions. PN-junction. PN-junction in steady state, depletion layer, built-in voltage. Barrier and diffusion capacitance of PN junction. Band diagram without external voltage and for forward and reverse biased junction . Current-voltage characteristics. Breakdown of PN junction.
3 Semiconductor Diode. Current-voltage characteristics. Diode as rectifier, reference voltage source, Differential resistance of forward biased diode, diode as voltage controlled resistance and a switch..
4. Semiconductor Diode. Special types of diode: varicap, varactor, tunnel diode, Schottky diode. Fotodiode. Structure PIN, PIN-diode.
5 Semiconductor Diode. Technology of semiconductor diode. Typical cuircuits using semiconductor diode. Typical parameters of semiconuctor diodes.
6. Bipolar junction transistors (BJT). Structure and principle of operation (transistor effect). Current-voltage characteristics of common emitter configuration. Operation modes (active normal, active inverse, saturation, closed).
7. Bipolar junction transistors (BJT):Linearized small-signal models of bipolar transistors, h-parameters, y-parameters. The first and the second breakdown of the transistor, breakdown characteristics. The limits of transitor operation (safe operating area).
8. Bipolar junction transistors (BJT):Simple circuits with transistors. DC properties (operating point). Transistor as an amplifier in CE, CB configuration, emitter follower, current transfer, voltage transfer, input and output impedance. Transistor as a switch.
9. Field effect transistors JFET. MOSFET. Types of transistors: n-channel, p-channel, enhancement type, depletion type. Structure, principle of operation. Linear regime and saturation. Current-voltage characteristics. Transistor as a current source, voltage amplifier, switch and controlled resistance.
10. Field effect transistors. Linearized small signal low-frequency model. Structure CCD. Field effect transistor as memory bit. MESFET, structure, principle of operation. Power MOSFET: special structures, DMOS, VMOS, HEXFET (parallel integration). IGBT (insulated gate bipolar transitor), structure, equivalent circuit, principle of operation.
11. Power electronic devices. Silicon-controlled rectifier (SCR, thyristor): structure, equivalent circuit, principle of operation (the thyristor effect), current-voltage characteristics (forward blocking region, forward conduction region, reverse blocking region, reverse avalanche region, forward blocking voltage, holding current). Related devices: Silicon-controlled switch (SCS), Shockley diode): structure, characteristics. DIAC, TRIAC: structure, characteristics.
12. Optoelectronic devices Materials for light detectors, absorption of light, penetration depth. Photoresistor, photoconductivity. Phototransistor. Light emitting diode. Semiconductor laser.
13. Vacuum devices. Thermionic emission, vacuum tubes, diode, triode, pentode. Microwave devices - klystron, magnetron.
Specification of controlled education, way of implementation and compensation for absences
Classification of course in study plans
- Programme EEKR-BK Bachelor's
branch BK-AMT , 1. year of study, summer semester, 7 credits, compulsory
branch BK-EST , 1. year of study, summer semester, 7 credits, compulsory
branch BK-MET , 1. year of study, summer semester, 7 credits, compulsory
branch BK-SEE , 1. year of study, summer semester, 7 credits, compulsory
branch BK-TLI , 1. year of study, summer semester, 7 credits, compulsory