Course detail
Microelectronic Devices and Structures
FEKT-LMPRAcad. year: 2012/2013
Fundamental building blocks of microelectronic structures.
Language of instruction
Czech
Number of ECTS credits
5
Mode of study
Not applicable.
Guarantor
Department
Learning outcomes of the course unit
Deep knowledge of microelectronic devices, their principles, structures and models in circuit simulators.
Prerequisites
The subject knowledge on the Bachelor´s degree level is requested.
Co-requisites
Not applicable.
Planned learning activities and teaching methods
Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.
Assesment methods and criteria linked to learning outcomes
Requirements for completion of a course are specified by a regulation issued by the lecturer responsible for the course and updated for every.
Course curriculum
Not applicable.
Work placements
Not applicable.
Aims
Detailed investigation of structures and properties of microelectronic devices, their physical and circuit models.
Detailed investigation of device models, their parameters and applicability.
Detailed investigation of device models, their parameters and applicability.
Specification of controlled education, way of implementation and compensation for absences
The content and forms of instruction in the evaluated course are specified by a regulation issued by the lecturer responsible for the course and updated for every academic year.
Recommended optional programme components
Not applicable.
Prerequisites and corequisites
Not applicable.
Basic literature
Not applicable.
Recommended reading
Sze S.M.: Physics of Semiconductor Devices. Wiley, 1981. (EN)
Classification of course in study plans
Type of course unit
Lecture
26 hod., optionally
Teacher / Lecturer
Syllabus
1. Semiconductor physics: Brief review
2. PN junction, semiconductor diodes.
3. Metal-semiconductor junction, Schottky diodes, ohmic contacts.
4. Heterojunctions, superlattices.
5. Bipolar junction transistor.
6. Heterojunction bipolar transistor.
7. MIS structure.
8. Transistor MOSFET, CMOS structures.
9. Modern field effect transistors.
10. Transistor HEMT.
11. Light emitting diodes, semiconductor lasers.
12. New physical phenomena and related structures.
13. Time reserve.
Literature
Sze S. M., Ng K. K.: Physics of Semiconductor Devices. Wiley, 2006.
Sze S. M., Chang C. Y.: ULSI Devices, Wiley, 2000.
Hess K.: Advanced Theory of Semiconductor Devices. Wiley, 2000.
Liu J.: Photonic Devices. Cambridge University Press, 2005.
Brennan K. F., Brown A. S.: Theory of Modern Semiconductor Devices. Wiley 2002.
2. PN junction, semiconductor diodes.
3. Metal-semiconductor junction, Schottky diodes, ohmic contacts.
4. Heterojunctions, superlattices.
5. Bipolar junction transistor.
6. Heterojunction bipolar transistor.
7. MIS structure.
8. Transistor MOSFET, CMOS structures.
9. Modern field effect transistors.
10. Transistor HEMT.
11. Light emitting diodes, semiconductor lasers.
12. New physical phenomena and related structures.
13. Time reserve.
Literature
Sze S. M., Ng K. K.: Physics of Semiconductor Devices. Wiley, 2006.
Sze S. M., Chang C. Y.: ULSI Devices, Wiley, 2000.
Hess K.: Advanced Theory of Semiconductor Devices. Wiley, 2000.
Liu J.: Photonic Devices. Cambridge University Press, 2005.
Brennan K. F., Brown A. S.: Theory of Modern Semiconductor Devices. Wiley 2002.
Exercise in computer lab
26 hod., compulsory
Teacher / Lecturer
Syllabus
1. Band diagram of semiconductor structures, charge carriers concentration.
2. Extraction of pn-diode parameters from I-V characteristics.
3. Semiconductor diode as analog switch.
4. Barrier capacitance of semiconductor diode.
5. Extraction of Schottky diode parameters from I-V characteristics.
6. Extraction of diode parameters from C-V characteristics.
7. Diode structures in integrated circuits.
8. Bipolar junction transistor: structures and parameters.
9. Test
10. MOSFET: structures and parameters.
11. Analog applications of MOSFET: analog switch, active load.
12. Digital application of MOSFET: CMOS gate.
13. Light emitting diodes: structures and parameters.
2. Extraction of pn-diode parameters from I-V characteristics.
3. Semiconductor diode as analog switch.
4. Barrier capacitance of semiconductor diode.
5. Extraction of Schottky diode parameters from I-V characteristics.
6. Extraction of diode parameters from C-V characteristics.
7. Diode structures in integrated circuits.
8. Bipolar junction transistor: structures and parameters.
9. Test
10. MOSFET: structures and parameters.
11. Analog applications of MOSFET: analog switch, active load.
12. Digital application of MOSFET: CMOS gate.
13. Light emitting diodes: structures and parameters.