Course detail

Diagnostic Methods in Electroengineering

FEKT-LDMEAcad. year: 2011/2012

Organization of testing in Czech Rep. and EU. Diagnostic methods for evaluation of properties and parameters of electroinsulating materials and systems. Diagnostic methods for evaluation of properties of semiconductor wafers and structures, of contamination and defects in semiconductor materials. Diagnostic methods based on exploitation of electron beam for evaluation of structure and composition of materials.
Theory of evaluation of measured data.

Language of instruction

Czech

Number of ECTS credits

6

Mode of study

Not applicable.

Learning outcomes of the course unit

Students will receive theoretical and practical knowledge of diagnostic methods used for evaluation of properties and parameters of electroinsulating and semiconductor materials and structures. Students will learn of diagnostic methods based on exploitation of electron beams for evaluation of structure and composition of materials.

Prerequisites

The subject knowledge on the Bachelor´s degree level is requested.

Co-requisites

Not applicable.

Planned learning activities and teaching methods

Teaching methods depend on the type of course unit as specified in the article 7 of BUT Rules for Studies and Examinations.

Assesment methods and criteria linked to learning outcomes

Requirements for accreditation:
Active participation in laboratory lessons. Passing of semester project. Performance and passing of reports from laboratory measurements.
Final test.

Course curriculum

Diagnostics and testing. Organization of testing and certification in CR and EU. Summary of diagnostic methods.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in DC electric field.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in electric field at frequency 50 Hz and at high voltage.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in electric field at middle and high frequency.
Diagnostic methods connected with evaluation of influence of working conditions on materials properties.
Diagnostic methods for evaluation of electrical properties of semiconductor wafers and structures. Resistivity measurements, four-point probe, spreading resistance, concentration-depth profile. Methods based on evaluation of capacitance-voltage measurement.
Diagnostic methods for contamination and defect detection in semiconductor materials. Microscope techniques. AFM, AES, ESCA and SIMS techniques.
Diagnostic methods based on interaction of electrons with solid. Electron optics, resolution and depth of focus. Electron scattering and diffusion.
Diagnostic methods based on interaction of electrons with solid. Emission of electrons and X-ray quanta. Backscattered electrons and secondary electrons.
Diagnostic methods based on interaction of electrons with solid. Detectors and signal processing. Imaging with backscattered and secondary electrons.
Diagnostic methods based on interaction of electrons with solid. Diffraction crystal structure analysis. Elemental analysis.
Statistic analysis of one-dimensional data. Random sampling characteristics. Spot and interval parameters estimation of normal, exponential and Weibull's distribution.
Tests of hypotheses. Tests for identification of gross errors, Dixon`s test, Grubs`s test. Tests of sampling distribution coincidence. Chi squared test, Kolmogorov`s test. Test of coincidence or difference of two variables.

Work placements

Not applicable.

Aims

The aim of the course is to acquaint students with theory of diagnostic methods used for evaluation of properties and parameters of electroinsulating and semiconductor materials and structures, with theoretical principles of methods based on exploitation of electron beam for evaluation of structure and composition of material systems as well as with principles of evaluation of measured data.

Specification of controlled education, way of implementation and compensation for absences

Obligatory participation in teaching.

Recommended optional programme components

Not applicable.

Prerequisites and corequisites

Not applicable.

Basic literature

Not applicable.

Recommended reading

Not applicable.

Classification of course in study plans

  • Programme EEKR-ML Master's

    branch ML-EVM , 2. year of study, winter semester, compulsory

  • Programme EEKR-CZV lifelong learning

    branch ET-CZV , 1. year of study, winter semester, compulsory

Type of course unit

 

Lecture

39 hours, optionally

Teacher / Lecturer

Syllabus

Diagnostics and testing. Organization of testing and certification in CR and EU. Summary of diagnostic methods.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in DC electric field.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in electric field at frequency 50 Hz and at high voltage.
Diagnostic methods for evaluation of properties of electroinsulating materials and systems in electric field at middle and high frequency.
Diagnostic methods connected with evaluation of influence of working conditions on materials properties.
Diagnostic methods for evaluation of electrical properties of semiconductor wafers and structures. Resistivity measurements, four-point probe, spreading resistance, concentration-depth profile. Methods based on evaluation of capacitance-voltage measurement.
Diagnostic methods for contamination and defect detection in semiconductor materials. Microscope techniques. AFM, AES, ESCA and SIMS techniques.
Diagnostic methods based on interaction of electrons with solid. Electron optics, resolution and depth of focus. Electron scattering and diffusion.
Diagnostic methods based on interaction of electrons with solid. Emission of electrons and X-ray quanta. Backscattered electrons and secondary electrons.
Diagnostic methods based on interaction of electrons with solid. Detectors and signal processing. Imaging with backscattered and secondary electrons.
Diagnostic methods based on interaction of electrons with solid. Diffraction crystal structure analysis. Elemental analysis.
Statistic analysis of one-dimensional data. Random sampling characteristics. Spot and interval parameters estimation of normal, exponential and Weibull's distribution.
Tests of hypotheses. Tests for identification of gross errors, Dixon`s test, Grubs`s test. Tests of sampling distribution coincidence. Chi squared test, Kolmogorov`s test. Test of coincidence or difference of two variables.

Exercise in computer lab

10 hours, compulsory

Teacher / Lecturer

Syllabus

Electron trajectories in solids and in gas.
Electron trajectories in electrostatic field.
Electron trajectories in electrostatic and electromagnetic field.
Spot and interval estimation of parameters of normal, exponential and Weibull's distribution.
Tests of hypotheses.

Laboratory exercise

12 hours, compulsory

Teacher / Lecturer

Syllabus

Diagnostics of electroinsulating materials and systems on bases of evaluation of absorption characteristics.
Diagnostics of electroinsulating materials and systems on bases of evaluation of components of complex permitivity at frequency 50 Hz and at high voltage.
Diagnostics of electroinsulating materials and systems on bases of evaluation of components of complex permitivity at middle and high frequencies.
Scanning electron microscopy, specimen observation with individual detectors, evaluation of obtained information.
Work on X-ray microanalyzer. Evaluation of spectra.

The other activities

4 hours, compulsory

Teacher / Lecturer

Syllabus

Introduction to laboratory exercises. Random and systematic error of measurement. Evaluation of measurement results.
Visit of diagnostic laboratories at ISI Brno.