Publication result detail

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

ŠIK, O.; ŠKARVADA, P.; GRMELA, L.; ELHADIDY, H.; VONDRA, M.; ŠIKULA, J.; FRANC, J.

Original Title

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

English Title

Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral density were measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IV characteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage causes steeper detector additive noise growth when the guard ring electrode disconnected.

English abstract

Experimental studies of transport and noise characteristics of cadmium-zinc-telluride (CdZnTe) crystal with symmetric gold contacts and a guard ring electrode have been carried out. The current-voltage (IV) characteristics and the noise spectral density were measured at room temperature under the dark. The sample with disconnected guard ring electrode showed symmetric characteristics for both bias voltage polarities. The shape IV characteristics indicated the presence of carrier injection, leading to IV characteristics non-linearity. Semiconductor surface has been identified as the main noise and leakage current source. After connecting the guard ring electrode, the leakage currents were suppressed by 2 orders and the noise spectral density decreased by 5 orders. In case of connected guard ring electrode, the asymmetry of IV characteristics has been observed. The contact with worse rectifying properties had higher contribution of noise to the detector system. Increasing bias voltage causes steeper detector additive noise growth when the guard ring electrode disconnected.

Keywords

cdte, surface conductivity, noise

Key words in English

cdte, surface conductivity, noise

Authors

ŠIK, O.; ŠKARVADA, P.; GRMELA, L.; ELHADIDY, H.; VONDRA, M.; ŠIKULA, J.; FRANC, J.

RIV year

2014

Released

06.06.2013

Publisher

IOP Publishing

Location

London

ISBN

0031-8949

Periodical

Physica Scripta

Volume

85

Number

03

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

5

Pages count

5

URL

http://iopscience.iop.org/1402-4896/2013/T157/014064

BibTex

@article{BUT99230,
  author="Ondřej {Šik} and Pavel {Škarvada} and Lubomír {Grmela} and Hassan {Elhadidy} and Marek {Vondra} and Josef {Šikula} and Jan {Franc}",
  title="Contact Quality Analysis and Noise Sources Determination of CdZnTe-Based High Energy Photon Detectors",
  journal="Physica Scripta",
  year="2013",
  volume="85",
  number="03",
  pages="1--5",
  issn="0031-8949",
  url="http://iopscience.iop.org/1402-4896/2013/T157/014064"
}