Publication result detail

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

TOMÁNEK, P.; ŠKARVADA, P.; DALLAEVA, D.; GRMELA, L.; MACKŮ, R.; SMITH, S.

Original Title

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

English Title

Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.

English abstract

Monocrystalline silicon is still very interesting material for solar cells fabrication due to its quality and external efficiency. Nevertheless during a tailoring of eligible silicon wafers, some inhomogeneities or irregularities emerge and provide defects which give trouble to good operation of solar panels. Generally, there are two classes of defects in silicon wafer-Material defects due to imperfections or irregularity in crystal structure (point, line, square or volume defects), and defects induced by wafer processing. To avoid a use of damaged cells, macroscopic and microscopic measurement techniques must be applied. In this paper we present a microscopic method combining electrical noise measurements with scanning probe localization of luminous micro-spots defects. The paper brings experimental results showing local electric and optical investigations of defects in etched monocrystalline silicon solar cells and a use of cold field emission tungsten electrode as a local probe for apertureless scanning near-field optical microscope.

Keywords

Silicon solar cell, Defect, Near-field optically induced photocurrent, Scanning near-field optical microscopy, Cold-field emission electrode

Key words in English

Silicon solar cell, Defect, Near-field optically induced photocurrent, Scanning near-field optical microscopy, Cold-field emission electrode

Authors

TOMÁNEK, P.; ŠKARVADA, P.; DALLAEVA, D.; GRMELA, L.; MACKŮ, R.; SMITH, S.

RIV year

2014

Released

21.05.2013

Publisher

MultiScience Publishing

Location

Hebei, China

ISBN

1708-5284

Periodical

World Journal of Engineering

Volume

10

Number

2

State

United Kingdom of Great Britain and Northern Ireland

Pages from

119

Pages to

124

Pages count

6

BibTex

@article{BUT98809,
  author="Pavel {Tománek} and Pavel {Škarvada} and Dinara {Sobola} and Lubomír {Grmela} and Robert {Macků} and Steve J. {Smith}",
  title="Cold field emission electrode as a local probe of proximal microscopes-Investigation of defects in monocrystalline silicon solar cells",
  journal="World Journal of Engineering",
  year="2013",
  volume="10",
  number="2",
  pages="119--124",
  issn="1708-5284"
}