Detail publikačního výsledku

Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions

DALLAEVA, D.; TOMÁNEK, P.; RAMAZANOV, S.

Original Title

Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions

English Title

Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions

Type

Paper in proceedings (conference paper)

Original Abstract

The purpose of the paper is a study of films morphology of silicon carbide and aluminum nitride solid solution. The films were obtained by magnetron sputtering. The described method allows solving a measure foreground task of electronics at nanometer and atomic levels.

English abstract

The purpose of the paper is a study of films morphology of silicon carbide and aluminum nitride solid solution. The films were obtained by magnetron sputtering. The described method allows solving a measure foreground task of electronics at nanometer and atomic levels.

Keywords

Silicon carbide, Aluminum nitride, Atomic force microscopy, Scanning tunneling microscopy, Thin film

Key words in English

Silicon carbide, Aluminum nitride, Atomic force microscopy, Scanning tunneling microscopy, Thin film

Authors

DALLAEVA, D.; TOMÁNEK, P.; RAMAZANOV, S.

RIV year

2013

Released

11.10.2012

Publisher

Vysoke uceni technicke v Brne, Fakulta elektrotechniky a komunikacnich technologii, Ustav fyziky

Location

Brno

ISBN

978-80-214-4594-9

Book

New trends in physics 2012

Pages from

149

Pages to

152

Pages count

4

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@inproceedings{BUT94390,
  author="Dinara {Sobola} and Pavel {Tománek} and Shihgasan {Ramazanov}",
  title="Scanning tunneling microscopy of high-resistance SiC-AlN solid solutions",
  booktitle="New trends in physics 2012",
  year="2012",
  pages="149--152",
  publisher="Vysoke uceni technicke v Brne, Fakulta elektrotechniky a komunikacnich technologii, Ustav fyziky",
  address="Brno",
  isbn="978-80-214-4594-9"
}