Application of AFM in Microscopy and in Fabrication of Micro/Nanostructures

Application of AFM in Microscopy and in Fabrication of Micro/Nanostructures

Peer-reviewed article not indexed in WoS or Scopus

In the paper AFM studies of microstructures etched by ion beams into Si and Au surfaces, and AFM local anodic oxidation of Ti thin films is presented. Using the AFM technique the etching limits of inert atoms in production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half-width of the lines did not depend linearly on this voltage. The results are useful for studies of quantum effects in nanostructures and experiments in fabrication of nanoelectronic devices (e.g. SET).

In the paper AFM studies of microstructures etched by ion beams into Si and Au surfaces, and AFM local anodic oxidation of Ti thin films is presented. Using the AFM technique the etching limits of inert atoms in production of silicon and silver grids were found. It was proved that the height of Ti oxide lines fabricated by AFM increases linearly with the voltage between a tip and a sample. On the other hand, the half-width of the lines did not depend linearly on this voltage. The results are useful for studies of quantum effects in nanostructures and experiments in fabrication of nanoelectronic devices (e.g. SET).

AFM fabrication, local anodic oxidation, oxide nanostructures

LOPOUR, F., ŠIKOLA, T., SPOUSTA, J., ŠKODA, D., MATĚJKA, F., KALOUSEK, R.

01.08.2002

0142-2421

SURFACE AND INTERFACE ANALYSIS

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1

United Kingdom of Great Britain and Northern Ireland

352

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