Publication result detail

The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

RUZGAR, S.; CAGLAR, Y.; POLAT, Ö.; SOBOLA, D.; CAGLAR, M.

Original Title

The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

English Title

The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions

Type

WoS Article

Original Abstract

Fe-substituted CuO thin films have been prepared by spin coating onto cleaned n-Si and glass substrates at various concentrations (2%, 6%, 10%). The AFM results show that the surface morphology of CuO thin films is strongly influenced by film thickness. The optical band gaps of the films were determined with Kubelka Munk function by using diffuse reflectance data and a reduction of 59 meV in the optical band gap was observed for 10% Fe doped CuO film. The ideality factors and barrier height values of the diodes have been varied between 3.17 and 2.74 and 0.82 and 0.71 eV with the 2%, 6%, and 10% Fe doping, respectively. Additionally, the series resistance (RS) values have been defined via employing the Cheung-Cheung method. The highest and lowest values of RS have been calculated as 1332 ohm for CuO/n-Si and 18 ohm for 6%Fe:CuO/n-Si, respectively. The electrical characteristics of these heterojunction structures have been examined under dark and different illumination intensities. Moreover, their photovoltaic performances have been compared. Furthermore, the power conversion efficiencies of CuO:Fe/n-Si have been calculated and found to be increased from 0.1 to 1.13% with increasing Fe doping.

English abstract

Fe-substituted CuO thin films have been prepared by spin coating onto cleaned n-Si and glass substrates at various concentrations (2%, 6%, 10%). The AFM results show that the surface morphology of CuO thin films is strongly influenced by film thickness. The optical band gaps of the films were determined with Kubelka Munk function by using diffuse reflectance data and a reduction of 59 meV in the optical band gap was observed for 10% Fe doped CuO film. The ideality factors and barrier height values of the diodes have been varied between 3.17 and 2.74 and 0.82 and 0.71 eV with the 2%, 6%, and 10% Fe doping, respectively. Additionally, the series resistance (RS) values have been defined via employing the Cheung-Cheung method. The highest and lowest values of RS have been calculated as 1332 ohm for CuO/n-Si and 18 ohm for 6%Fe:CuO/n-Si, respectively. The electrical characteristics of these heterojunction structures have been examined under dark and different illumination intensities. Moreover, their photovoltaic performances have been compared. Furthermore, the power conversion efficiencies of CuO:Fe/n-Si have been calculated and found to be increased from 0.1 to 1.13% with increasing Fe doping.

Keywords

THIN-FILMS; ELECTRICAL-PROPERTIES; CURRENT-VOLTAGE; CUPRIC OXIDE; DIODE; NANOSTRUCTURES; FABRICATION; GROWTH

Key words in English

THIN-FILMS; ELECTRICAL-PROPERTIES; CURRENT-VOLTAGE; CUPRIC OXIDE; DIODE; NANOSTRUCTURES; FABRICATION; GROWTH

Authors

RUZGAR, S.; CAGLAR, Y.; POLAT, Ö.; SOBOLA, D.; CAGLAR, M.

RIV year

2022

Released

01.08.2021

Publisher

SPRINGER

Location

DORDRECHT

ISBN

0957-4522

Periodical

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Volume

32

Number

15

State

Kingdom of the Netherlands

Pages from

20755

Pages to

20766

Pages count

12

URL

https://link.springer.com/article/10.1007%2Fs10854-021-06589-9

BibTex

@article{BUT172211,
  author="Serif {Ruzgar} and Yasemin {Caglar} and Özgür {Polat} and Dinara {Sobola} and Mujdat {Caglar}",
  title="The influence of Fe substitution into photovoltaic performance of p-CuO/n-Si heterojunctions",
  journal="JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS",
  year="2021",
  volume="32",
  number="15",
  pages="20755--20766",
  doi="10.1007/s10854-021-06589-9",
  issn="0957-4522",
  url="https://link.springer.com/article/10.1007%2Fs10854-021-06589-9"
}