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BRODSKÝ, J.
Original Title
Graphene field-effect transistor properties modulation via mechanical strain induced by micro-cantilever
Type
article in a collection out of WoS and Scopus
Language
English
Original Abstract
This work presents a new method, which enables the electrical characterization of graphene monolayer with induced mechanical strain. The device is a combination of two dimensional field effect transistor (2DFET) and a MEMS cantilever, both of which can be used to alter graphene properties. The first method applies external electric field to the graphene monolayer. The second method is based on mechanical bending of the cantilever by external force, which induces mechanical strain in the characterized layer. By sweeping the gate voltage (VGS) in range from – 50 V to + 50 V and measuring the current between drain and source (IDS) with fixed drain source voltage (VDS) at 1 V, Dirac point of graphene is found at ≈ 9.3 V of VGS. After bending of the cantilever, the sweep is performed again. The induced strain shifts the position of the Dirac point by ≈ 1.3 V to VGS = 8 V. Because the fabrication process is compatible with silicon technology, this method brings new possibilities in graphene strain engineering.
Keywords
graphene, Dirac point, MEMS, FET, cantilever, mechanical strain
Authors
Released
27. 4. 2021
Publisher
Brno University of Technology, Faculty of Electrical Engineering and Communication
Location
Brno
ISBN
978-80-214-5943-4
Book
Proceedings II of the 27th Conference STUDENT EEICT selected papers
Edition
1
Pages from
81
Pages to
84
Pages count
4
URL
https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2021_sbornik_2_v3_DOI.pdf
BibTex
@inproceedings{BUT171865, author="Jan {Brodský}", title="Graphene field-effect transistor properties modulation via mechanical strain induced by micro-cantilever", booktitle="Proceedings II of the 27th Conference STUDENT EEICT selected papers", year="2021", series="1", pages="81--84", publisher="Brno University of Technology, Faculty of Electrical Engineering and Communication", address="Brno", doi="10.13164/eeict.2021.81", isbn="978-80-214-5943-4", url="https://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2021_sbornik_2_v3_DOI.pdf" }