Detail publikačního výsledku

Effect of gamma radiation on properties and performance of GaAs based solar cells

PAPEŽ, N.; GAJDOŠ, A.; SOBOLA, D.; DALLAEV, R.; ŠKARVADA, P.; MACKŮ, R.; GRMELA, L.

Original Title

Effect of gamma radiation on properties and performance of GaAs based solar cells

English Title

Effect of gamma radiation on properties and performance of GaAs based solar cells

Type

WoS Article

Original Abstract

The structure and properties of gallium arsenide photovoltaic cells were investigated using a wide range of analytical methods. Solar cells were exposed to intense gamma irradiation with a dose of 500 kGy. The radioactive isotope Cobalt-60 was used as the emitter. Fourier transform infrared spectroscopy (FTIR), ellipsometry, and spectrophotometry were used as optical measurement methods for observing the shift of permittivity, reflectance, and other surface investigation. Changes in thin-film composition were also analyzed by secondary-ion mass spectrometry (SIMS) by surface sputtering. Electrical characteristics were also observed. Minority carrier properties, junctions, or defects in semiconductor were investigated by scanning electron microscopy (SEM) with electron beam-induced current method (EBIC). Complementarily was proved diffusion of metals into thin layers of GaAs structure. This phenomenon affects the overall performance of the solar cell.

English abstract

The structure and properties of gallium arsenide photovoltaic cells were investigated using a wide range of analytical methods. Solar cells were exposed to intense gamma irradiation with a dose of 500 kGy. The radioactive isotope Cobalt-60 was used as the emitter. Fourier transform infrared spectroscopy (FTIR), ellipsometry, and spectrophotometry were used as optical measurement methods for observing the shift of permittivity, reflectance, and other surface investigation. Changes in thin-film composition were also analyzed by secondary-ion mass spectrometry (SIMS) by surface sputtering. Electrical characteristics were also observed. Minority carrier properties, junctions, or defects in semiconductor were investigated by scanning electron microscopy (SEM) with electron beam-induced current method (EBIC). Complementarily was proved diffusion of metals into thin layers of GaAs structure. This phenomenon affects the overall performance of the solar cell.

Keywords

gallium arsenide; radiation; cobalt-60; ebic; sims; ellipsometry; electroluminescence; sims

Key words in English

gallium arsenide; radiation; cobalt-60; ebic; sims; ellipsometry; electroluminescence; sims

Authors

PAPEŽ, N.; GAJDOŠ, A.; SOBOLA, D.; DALLAEV, R.; ŠKARVADA, P.; MACKŮ, R.; GRMELA, L.

RIV year

2021

Released

10.06.2020

Publisher

Elsevier B.V.

Location

Netherlands

ISBN

0169-4332

Periodical

APPLIED SURFACE SCIENCE

Volume

527

Number

146766

State

Kingdom of the Netherlands

Pages from

135

Pages to

146

Pages count

11

URL

https://www.sciencedirect.com/science/article/pii/S0169433220315233

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@article{BUT164225,
  author="Nikola {Papež} and Adam {Gajdoš} and Dinara {Sobola} and Rashid {Dallaev} and Pavel {Škarvada} and Robert {Macků} and Lubomír {Grmela}",
  title="Effect of gamma radiation on properties and performance of GaAs based solar cells",
  journal="APPLIED SURFACE SCIENCE",
  year="2020",
  volume="527",
  number="146766",
  pages="135--146",
  doi="10.1016/j.apsusc.2020.146766",
  issn="0169-4332",
  url="https://www.sciencedirect.com/science/article/pii/S0169433220315233"
}