Detail publikačního výsledku

Local topography of optoelectronic substrates prepared by dry plasma etching process

DALLAEVA, D.; RAMAZANOV, S.; PROKOPYEVA, E.; TOMÁNEK, P.; GRMELA, L.

Original Title

Local topography of optoelectronic substrates prepared by dry plasma etching process

English Title

Local topography of optoelectronic substrates prepared by dry plasma etching process

Type

WoS Article

Original Abstract

In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.

English abstract

In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.

Keywords

etching, sapphire, silicon carbide, substrate, atomic force microscopy

Key words in English

etching, sapphire, silicon carbide, substrate, atomic force microscopy

Authors

DALLAEVA, D.; RAMAZANOV, S.; PROKOPYEVA, E.; TOMÁNEK, P.; GRMELA, L.

RIV year

2016

Released

07.01.2015

Publisher

SPIE

Location

USA

ISBN

0277-786X

Periodical

Proceedings of SPIE

Volume

9442

Number

9442

State

United States of America

Pages from

9442081

Pages to

9442086

Pages count

6

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@article{BUT111923,
  author="Dinara {Sobola} and Shihgasan {Ramazanov} and Elena {Prokopyeva} and Pavel {Tománek} and Lubomír {Grmela}",
  title="Local topography of optoelectronic substrates prepared by dry plasma etching process",
  journal="Proceedings of SPIE",
  year="2015",
  volume="9442",
  number="9442",
  pages="9442081--9442086",
  doi="10.1117/12.2176367",
  issn="0277-786X"
}