Publication result detail

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.

Original Title

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

English Title

Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements

Type

WoS Article

Original Abstract

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

English abstract

The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.

Keywords

Memory element, memristor, pinched hysteresis loop

Key words in English

Memory element, memristor, pinched hysteresis loop

Authors

BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.

RIV year

2014

Released

01.04.2013

Publisher

Společnost pro radioeletronické inženýrství

Location

Brno

ISBN

1210-2512

Periodical

Radioengineering

Volume

22

Number

1

State

Czech Republic

Pages from

132

Pages to

135

Pages count

4

BibTex

@article{BUT99802,
  author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}",
  title="Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements",
  journal="Radioengineering",
  year="2013",
  volume="22",
  number="1",
  pages="132--135",
  issn="1210-2512"
}