Publication result detail

Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors

ŠIK, O.; GRMELA, L.; ELHADIDY, H.; DĚDIČ, V.; ŠIKULA, J.; GRMELA, P.; FRANC, J.; ŠKARVADA, P.; HOLCMAN, V.

Original Title

Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors

English Title

Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Polarization phenomena in a metal-semiconductor-metal (M-S-M) structure of metallic Schottky contacts deposited on CdZnTe radiation detectors were studied. We evaluate the distribution of the electric field along the biased M-S-M structure by Pockels measurements. The results show that almost all the electric field is developed across the depletion layer of the reverse-biased contact. The noise measurements of the CdZnTe detectors studied show that the dominant noise is 1/f m noise. The 1/f m noise, with parameter m close to unity, is present at frequencies bellow 100 Hz and its bandwidth decreases in the course of the polarization process. At higher frequencies, we observed an increase of the m parameter to 2, which indicates a strengthened effect of generation-recombination processes. In the frequency band of dominating 1/f m = 1 noise, the increase of magnitude of noise spectral density was proportional to the power of 6, in relation to current through the detector. This high value is explained as a result of a screening effect of the space charge buildup during the polarization

English abstract

Polarization phenomena in a metal-semiconductor-metal (M-S-M) structure of metallic Schottky contacts deposited on CdZnTe radiation detectors were studied. We evaluate the distribution of the electric field along the biased M-S-M structure by Pockels measurements. The results show that almost all the electric field is developed across the depletion layer of the reverse-biased contact. The noise measurements of the CdZnTe detectors studied show that the dominant noise is 1/f m noise. The 1/f m noise, with parameter m close to unity, is present at frequencies bellow 100 Hz and its bandwidth decreases in the course of the polarization process. At higher frequencies, we observed an increase of the m parameter to 2, which indicates a strengthened effect of generation-recombination processes. In the frequency band of dominating 1/f m = 1 noise, the increase of magnitude of noise spectral density was proportional to the power of 6, in relation to current through the detector. This high value is explained as a result of a screening effect of the space charge buildup during the polarization

Keywords

Gamma detectors, CdTe. Polarization, Pockels Effect, Noise

Key words in English

Gamma detectors, CdTe. Polarization, Pockels Effect, Noise

Authors

ŠIK, O.; GRMELA, L.; ELHADIDY, H.; DĚDIČ, V.; ŠIKULA, J.; GRMELA, P.; FRANC, J.; ŠKARVADA, P.; HOLCMAN, V.

RIV year

2014

Released

06.06.2013

Publisher

IOP

Location

London, Great Britain

ISBN

1748-0221

Periodical

Journal of Instrumentation

Volume

6

Number

23

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

6

Pages count

6

URL

http://iopscience.iop.org/1748-0221/8/06/C06005

BibTex

@article{BUT99274,
  author="Ondřej {Šik} and Lubomír {Grmela} and Hassan {Elhadidy} and Václav {Dědič} and Josef {Šikula} and Petr {Grmela} and Jan {Franc} and Pavel {Škarvada} and Vladimír {Holcman}",
  title="Study of Electric Field Distribution and Low Frequency Noise of CdZnTe Radiation Detectors",
  journal="Journal of Instrumentation",
  year="2013",
  volume="6",
  number="23",
  pages="1--6",
  doi="10.1088/1748-0221/8/06/C06005",
  issn="1748-0221",
  url="http://iopscience.iop.org/1748-0221/8/06/C06005"
}