Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors

Nanostructured alumina-tantala dielectrics for high-frequency integral capacitors

Functioning sample

Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al 1.5 at.% Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised 1 um thick nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer).

Three types of thin solid films with the nanoscale inner structures were synthesized by sputtering-deposition and anodizing of Al layer, Al 1.5 at.% Si alloy layer, and Al/Ta bilayer on Si wafers. All the anodic films comprised 1 um thick nanoporous alumina layer as the key component. The essential differences were due to the silicon impurities (AlSi alloy) and the array of nanosized tantalum oxide protrusions in the alumina barrier layer (Al/Ta bilayer).

porous alumina; tantalum oxide; nanostructure; dielectric properties; electric polarization; integral capacitors; high-frequency performance

porous alumina; tantalum oxide; nanostructure; dielectric properties; electric polarization; integral capacitors; high-frequency performance

LabSensNano, SIX, UMEL

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