Publication result detail

Noise Contact Study of CdTe Radiation Detectors

GRMELA, L.; ŠIK, O.; ŠIKULA, J.

Original Title

Noise Contact Study of CdTe Radiation Detectors

English Title

Noise Contact Study of CdTe Radiation Detectors

Type

Paper in proceedings (conference paper)

Original Abstract

We have compared noise spectra and charge transport properties analysis results of CdTe radiation detectors: low-ohmic and semi-insulating. We observed assymmetry of IV characteristics of the low-ohmic detector between "normal" nad "reverse" bias, showing improper quality of contacts preparation, which resulted in higher concentration of impurities in M-S interface area. This finding was supported by the fact that the low frequency noise spectral density magnitude was proportional to applied voltage with exponent of 2.7, which is higher than theoretical value 2. The more advanced manufacturing technology of the semi-insulating detector resulted in symmetric contacts IV characteristics and its linear character. Also, this detector showed lower increase of noise spectral density magnitude with exponent of 2.3.

English abstract

We have compared noise spectra and charge transport properties analysis results of CdTe radiation detectors: low-ohmic and semi-insulating. We observed assymmetry of IV characteristics of the low-ohmic detector between "normal" nad "reverse" bias, showing improper quality of contacts preparation, which resulted in higher concentration of impurities in M-S interface area. This finding was supported by the fact that the low frequency noise spectral density magnitude was proportional to applied voltage with exponent of 2.7, which is higher than theoretical value 2. The more advanced manufacturing technology of the semi-insulating detector resulted in symmetric contacts IV characteristics and its linear character. Also, this detector showed lower increase of noise spectral density magnitude with exponent of 2.3.

Keywords

CdTe, 1/f noise, semiconductor reliability, semiconductor charge transport mechanism

Key words in English

CdTe, 1/f noise, semiconductor reliability, semiconductor charge transport mechanism

Authors

GRMELA, L.; ŠIK, O.; ŠIKULA, J.

RIV year

2013

Released

17.10.2012

Location

Košice, Slovensko

ISBN

978-80-553-1175-3

Book

Proceedings of the Scientific Conference Physics of Materials 2012

Edition

první

Pages from

99

Pages to

104

Pages count

6

BibTex

@inproceedings{BUT96521,
  author="Lubomír {Grmela} and Ondřej {Šik} and Josef {Šikula}",
  title="Noise Contact Study of CdTe Radiation Detectors",
  booktitle="Proceedings of the Scientific Conference Physics of Materials 2012",
  year="2012",
  series="první",
  number="1",
  pages="99--104",
  address="Košice, Slovensko",
  isbn="978-80-553-1175-3"
}