Publication result detail

Stochastic model for random tegraph signals in MOSFETS

ŠIKULA, J., DOBIS, P., PAVELKA, J., TACANO, M., HASHIGUCHI, S.

Original Title

Stochastic model for random tegraph signals in MOSFETS

English Title

Stochastic model for random tegraph signals in MOSFETS

Type

Paper in proceedings (conference paper)

Original Abstract

This paper investigates the emission and capture kinetics of random telegraf signals (RTS)in MOSFETs.The emphasis is on those signals showing a capture process which deviates from the standard Shockley-Read-Hall kinetics corresponding to a quadratic dependence on the number of carriers or on the drain current. A modified two-step approach is proposed which includes the capture of a carrier by trap located at the Si-SiO2 interface, folloved by a tunnelling process of the trapped carrier between the interface trap and a trap located in SiO2 layer.

English abstract

This paper investigates the emission and capture kinetics of random telegraf signals (RTS)in MOSFETs.The emphasis is on those signals showing a capture process which deviates from the standard Shockley-Read-Hall kinetics corresponding to a quadratic dependence on the number of carriers or on the drain current. A modified two-step approach is proposed which includes the capture of a carrier by trap located at the Si-SiO2 interface, folloved by a tunnelling process of the trapped carrier between the interface trap and a trap located in SiO2 layer.

Key words in English

RTS noise, 1/f noise, MOSFET

Authors

ŠIKULA, J., DOBIS, P., PAVELKA, J., TACANO, M., HASHIGUCHI, S.

Released

28.11.2003

Publisher

Meisei University Tokyo

Location

Tokyo

Book

Proceeding of the 18th Forum of Science and Technology of Fluctuations

Pages from

1

Pages count

4

BibTex

@inproceedings{BUT9409,
  author="Josef {Šikula} and Pavel {Dobis} and Jan {Pavelka} and Munecazu {Tacano} and Sumihisa {Hashiguchi}",
  title="Stochastic model for random tegraph signals in MOSFETS",
  booktitle="Proceeding of the 18th Forum of Science and Technology of Fluctuations",
  year="2003",
  pages="4",
  publisher="Meisei University Tokyo",
  address="Tokyo"
}