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PAVELKA, J., TANUMA, N., TACANO, M., ŠIKULA, J., MUSHA, T.
Original Title
Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
Temperature dependence of the Hooge parameter of the p- and n-type InGaAs heterostructures was measured in the 14K -- 300K region and compared with the mobility to find correlation between the 1/f noise characteristics and scattering processes in the semiconductors. The n-type sample's Hooge parameter is nearly 2x10-3 at 300K and p-type's about unity and these values change about one order down to 14K mainly due to the influence of traps. Experimental results were analysed in terms of the cross correlation quantum 1/f noise and the 1/f energy partition fluctuation thoery and good argument was found for the latter model.
English abstract
Key words in English
noise, fluctuations
Authors
Released
01.01.2003
Publisher
CNRL
Location
Prague
ISBN
80-239-1005-1
Book
Noise and Fluctuations
Pages from
123
Pages count
4
BibTex
@inproceedings{BUT9392, author="Jan {Pavelka} and Nobuhisa {Tanuma} and Munecazu {Tacano} and Josef {Šikula} and Toshimitsu {Musha}", title="Hooge Parameter of InGaAs Heterostructures Experimental Support for 1/f Energy Patrition Model", booktitle="Noise and Fluctuations", year="2003", pages="4", publisher="CNRL", address="Prague", isbn="80-239-1005-1" }