Publication result detail

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Original Title

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

English Title

Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes

Type

Paper in proceedings (conference paper)

Original Abstract

Low-frequency electrical (laser diode output voltage) and near-field optical (light output power) fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diodes (LDs) with an active region containing a single quantum well (SQW) layer. The noise measurements were performed in the frequency range from 20 Hz to 20 kHz, at dc current ranging from fractions of the threshold current through to multiples of it. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic for all samples regardless of technological treatments mentioned. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighbouring layers.

English abstract

Low-frequency electrical (laser diode output voltage) and near-field optical (light output power) fluctuation spectra and their cross-correlation factor have been investigated in GaAs/AlGaAs ridge waveguide laser diodes (LDs) with an active region containing a single quantum well (SQW) layer. The noise measurements were performed in the frequency range from 20 Hz to 20 kHz, at dc current ranging from fractions of the threshold current through to multiples of it. It is shown that in the lasing region the intensive Lorentzian-type electrical and optical noises with negative cross-correlation factor are characteristic for all samples regardless of technological treatments mentioned. This noise is due to charge carrier recombination processes in the interfaces between the active layer and the neighbouring layers.

Key words in English

GaAs/AlGaAs single-quantum-well laser diodes, low-frequency noise,near-field optical spectroscopy,

Authors

TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.

Released

15.11.2003

Publisher

Japan society of applied physics

Location

Nara, Japan

Book

Atomically controlled surfaces, interfaces and nanostructures

Pages from

431

Pages count

4

BibTex

@inproceedings{BUT9385,
  author="Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová}",
  title="Comparison of low-frequency noise and near-field optical spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes",
  booktitle="Atomically controlled surfaces, interfaces and nanostructures",
  year="2003",
  pages="4",
  publisher="Japan society of applied physics",
  address="Nara, Japan"
}