Publication detail

Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target

DALLAEVA, D. BILALOV, B. SAFARALIEV, G. KARDASHOVA, G. TOMÁNEK, P. ARKHIPOV, A.

Original Title

Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target

Type

conference paper

Language

English

Original Abstract

This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account.

Keywords

ion-plasma sputtering, sputtering velocity, growth rate, ion energy

Authors

DALLAEVA, D.; BILALOV, B.; SAFARALIEV, G.; KARDASHOVA, G.; TOMÁNEK, P.; ARKHIPOV, A.

RIV year

2012

Released

28. 6. 2012

Publisher

Vysoke uceni technicke v Brne

Location

LITERA, Tabor 43a, 61200 Brno

ISBN

978-80-214-4539-0

Book

IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.

Edition

FIRST

Pages from

49

Pages to

53

Pages count

5

BibTex

@inproceedings{BUT93002,
  author="Dinara {Sobola} and Bilal {Bilalov} and Gadjimet {Safaraliev} and Gulnara {Kardashova} and Pavel {Tománek} and Alexandr {Arkhipov}",
  title="Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target",
  booktitle="IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.",
  year="2012",
  series="FIRST",
  pages="49--53",
  publisher="Vysoke uceni technicke v Brne",
  address="LITERA, Tabor 43a, 61200 Brno",
  isbn="978-80-214-4539-0"
}