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BENEŠOVÁ, M., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J.
Original Title
Time-resolved contrast in near-field scanning optical microscopy of semiconductors
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
The lifetime local measurement of excess carriers in silicon samples are described. The work was performed with the implementation of scanning near-field optical microscopy (SNOM). We present here an alternative development of SNOM: its implementation as an imaging tool to study the dynamics of excess carriers in semiconductor devices. We concentrate on obtaining images for which the contrast mechanism is a time-dependent property of the sample, and attempt to relate them to important sample characteristics.
English abstract
Keywords
near-field optical microscopy, semiconductor, local measurement, contrast, evaluation
Key words in English
Authors
Released
15.12.2003
Publisher
Vysoké učení technické v Brně, Fakulta strojního inženýrství
Location
Brno
ISBN
80-214-2527-X
Book
Proceedings of International conference Nano´03
Pages from
201
Pages count
5
BibTex
@inproceedings{BUT8963, author="Markéta {Benešová} and Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová}", title="Time-resolved contrast in near-field scanning optical microscopy of semiconductors", booktitle="Proceedings of International conference Nano´03", year="2003", pages="5", publisher="Vysoké učení technické v Brně, Fakulta strojního inženýrství", address="Brno", isbn="80-214-2527-X" }