Publication result detail

Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

ELHADIDY, H.; ŠIKULA, J.; FRANC, J.

Original Title

Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

English Title

Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Symmetrical, non-linear and current–voltage (I–V) characteristics of a metal–semiconductor–metal (M-S-M) structure of two metallic Schottky contacts fabricated to a p-type semiconductor were modeled by treating the semiconductor as a resistor sandwiched between two identical head-to-head Schottky barriers. The voltage distributions along the M-S-M structure were numerically determined and found that the voltage drop across the reverse-biased Schottky barrier is dominating at the low bias voltage, and the dominant range depends on the value of the resistor of the semiconductor bulk. The field dependence of barrier height due to the image force was proposed to be the mechanism for the current through the M-S-M structure when the voltage drop across the reverse-biased barrier is dominating. The proposed model was applied to the I–V curves measured at different temperatures on low-resistivity p-type CdTe with Au contacts and the density of the effective acceptors calculated, and the zero-field Schottky barrier height and the Richardson constant were extracted using the activation energy method. The extracted parameters fitted well with that published for the same material structure.

English abstract

Symmetrical, non-linear and current–voltage (I–V) characteristics of a metal–semiconductor–metal (M-S-M) structure of two metallic Schottky contacts fabricated to a p-type semiconductor were modeled by treating the semiconductor as a resistor sandwiched between two identical head-to-head Schottky barriers. The voltage distributions along the M-S-M structure were numerically determined and found that the voltage drop across the reverse-biased Schottky barrier is dominating at the low bias voltage, and the dominant range depends on the value of the resistor of the semiconductor bulk. The field dependence of barrier height due to the image force was proposed to be the mechanism for the current through the M-S-M structure when the voltage drop across the reverse-biased barrier is dominating. The proposed model was applied to the I–V curves measured at different temperatures on low-resistivity p-type CdTe with Au contacts and the density of the effective acceptors calculated, and the zero-field Schottky barrier height and the Richardson constant were extracted using the activation energy method. The extracted parameters fitted well with that published for the same material structure.

Keywords

Schottky barrier, CdTe, Richardson Constant, metal-semiconductor-metal structure

Key words in English

Schottky barrier, CdTe, Richardson Constant, metal-semiconductor-metal structure

Authors

ELHADIDY, H.; ŠIKULA, J.; FRANC, J.

RIV year

2016

Released

07.12.2011

Publisher

IOP Publishing

Location

Bristol BS1 6BE United Kingdom

ISBN

0268-1242

Periodical

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Volume

27

Number

1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

1

Pages to

6

Pages count

6

BibTex

@article{BUT75497,
  author="Hassan {Elhadidy} and Josef {Šikula} and Jan {Franc}",
  title="Symmetrical current–voltage characteristic of a metal–semiconductor–metal structure of Schottky contacts and parameter retrieval of a CdTe structure",
  journal="SEMICONDUCTOR SCIENCE AND TECHNOLOGY",
  year="2011",
  volume="27",
  number="1",
  pages="1--6",
  issn="0268-1242"
}