Investigation of optical properties of SiC/(SiC)1-x(AlN)x heterostructures

Investigation of optical properties of SiC/(SiC)1-x(AlN)x heterostructures

Peer-reviewed article not indexed in WoS or Scopus

In this study the optical properties of SiC/(SiC)1-x(AlN)x heterostructures were investigated. The photoluminescence spectrum of (SiC)1-x(AlN)x samples at different temperatures and also the dependence of photoluminescence on wavelength of exciting light were studied. Absorption factor is defined using measured values of transmitting efficiency. The results of study of morphology and composition of obtained samples confirm growth regularity in single-crystal phase. It was observed that n-SiC/p-(SiC)1-x(AlN)x begins to shine at reverse voltage that a little exceed the voltage of irreversible breakdown.

In this study the optical properties of SiC/(SiC)1-x(AlN)x heterostructures were investigated. The photoluminescence spectrum of (SiC)1-x(AlN)x samples at different temperatures and also the dependence of photoluminescence on wavelength of exciting light were studied. Absorption factor is defined using measured values of transmitting efficiency. The results of study of morphology and composition of obtained samples confirm growth regularity in single-crystal phase. It was observed that n-SiC/p-(SiC)1-x(AlN)x begins to shine at reverse voltage that a little exceed the voltage of irreversible breakdown.

silicon carbide, aluminum nitride, magnetron sputtering, morphology, composition, photoluminescence, absorption factor, pre-breakdown electroluminescence

silicon carbide, aluminum nitride, magnetron sputtering, morphology, composition, photoluminescence, absorption factor, pre-breakdown electroluminescence

SAFARALIEV, G.; BILALOV, B.; DALLAEVA, D.; RAMAZANOV, S.; GERAEV, K.; TOMÁNEK, P.

2012

01.11.2011

SPIE

Bellingham, USA

0277-786X

Proceedings of SPIE

8306

8306

United States of America

83061K1

83061K6

6