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Detail publikačního výsledku
BIOLEK, D.; BAJER, J.; BIOLKOVÁ, V.; KOLKA, Z.
Original Title
Mutators for Transforming Nonlinear Resistor Into Memristor
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
A method of analogue emulation of the memristor with its prescribed charge (qM)-flux (phiM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR)-voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, phiM =kxvR, or phiM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.
English abstract
Keywords
memristor, constitutive relation, mutator
Key words in English
Authors
RIV year
2012
Released
29.08.2011
Publisher
IEEE
Location
Linkoping, Sweden
ISBN
9781457706189
Book
Proceedings of the ECCTD 2011
Pages from
488
Pages to
491
Pages count
4
Full text in the Digital Library
http://hdl.handle.net/
BibTex
@inproceedings{BUT73106, author="Dalibor {Biolek} and Josef {Bajer} and Viera {Biolková} and Zdeněk {Kolka}", title="Mutators for Transforming Nonlinear Resistor Into Memristor", booktitle="Proceedings of the ECCTD 2011", year="2011", pages="488--491", publisher="IEEE", address="Linkoping, Sweden", isbn="9781457706189" }