Publication result detail

Capacitance-voltage analysis for silicon solar cells

CHOBOLA, Z.; IBRAHIM, A.

Original Title

Capacitance-voltage analysis for silicon solar cells

English Title

Capacitance-voltage analysis for silicon solar cells

Type

Paper in proceedings (conference paper)

Original Abstract

Studie of capacitance associated the depletion region of a Schottky barrier or an abrupt junction provide extensive information on the concentrations and charakcteristics of electrically active centres in epitaxial layers and the near surface region of bulk semiconductors.

English abstract

Studie of capacitance associated the depletion region of a Schottky barrier or an abrupt junction provide extensive information on the concentrations and charakcteristics of electrically active centres in epitaxial layers and the near surface region of bulk semiconductors.

Key words in English

Silicon solar cell, Capacitance, Frequency, Doping concentration

Authors

CHOBOLA, Z.; IBRAHIM, A.

Released

15.11.2001

Publisher

Vysoké učení technické v Brně

Location

Brno

ISBN

80-214-1992-X

Book

Nové trendy ve fyzice

Pages from

84

Pages count

6

BibTex

@inproceedings{BUT7041,
  author="Zdeněk {Chobola} and Ali {Ibrahim}",
  title="Capacitance-voltage analysis for silicon solar cells",
  booktitle="Nové trendy ve fyzice",
  year="2001",
  pages="6",
  publisher="Vysoké učení technické v Brně",
  address="Brno",
  isbn="80-214-1992-X"
}