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ŠIKULA, J., HLÁVKA, J., PAVELKA, J., SEDLÁKOVÁ, V., GRMELA, L., TACANO, M., HASHIGUCHI, S.
Original Title
Low Frequency Noise of Tantalum Capacitors
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
A low frequency noise and charge carriers transport mechanism analysis was performed on tantalum capcitors in order to characterise their quality and reliabilityThe moedl of ta - ta2O5 - MnO2 MIS structure was used to give physical interpretation of VA characteristic noth in normal and reverse modes. The self-healing process based on high temperature MnO2- Mn2O3 transformation was studied and its kinetic determined on the basis of noise spectral density changes.
English abstract
Key words in English
Noise, tantalum capcitors, self-healing, reliability
Authors
Released
01.01.2001
Publisher
Electronic Components Institute Internationale Ltd.
Location
Kodaň, Dánsko
Book
Proceedings of CARTS-Euro 2001
Pages from
81
Pages count
4
BibTex
@inproceedings{BUT6837, author="Josef {Šikula} and Jan {Hlávka} and Jan {Pavelka} and Vlasta {Sedláková} and Lubomír {Grmela} and Munecazu {Tacano} and Sumihisa {Hashiguchi}", title="Low Frequency Noise of Tantalum Capacitors", booktitle="Proceedings of CARTS-Euro 2001", year="2001", pages="4", publisher="Electronic Components Institute Internationale Ltd.", address="Kodaň, Dánsko" }