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RECMAN, M.
Original Title
The Gummel-Poon Statistical Model
English Title
Type
Paper in proceedings (conference paper)
Original Abstract
The statistical model of the bipolar transistor must include the parameter correlations and proper distributions to accurately simulate transistor performance. The contribution presents the statistical Gummel-Poon model including the correlated parameters of saturation current and forward beta to account for transistor parameters production variations. The simulation results of a correlated model show a good match of measured and simulated characteristics and confirm the fundamental role of saturation current on forward beta dependence for correlated model development.
English abstract
Keywords
bipolar transistor, Gummel-Poon model, statistical model
Key words in English
Authors
Released
01.01.2001
Publisher
Vyd. Ing. Zdeněk Novotný, Brno 2001,
Location
Brno
ISBN
80-214-2027-8
Book
Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings. Crete September 3-12, 2001. Edited by V. Musil and J.Brzobohaty.
Pages from
276
Pages count
6
BibTex
@inproceedings{BUT6516, author="Milan {Recman}", title="The Gummel-Poon Statistical Model", booktitle="Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings. Crete September 3-12, 2001. Edited by V. Musil and J.Brzobohaty.", year="2001", pages="6", publisher="Vyd. Ing. Zdeněk Novotný, Brno 2001,", address="Brno", isbn="80-214-2027-8" }