Spectral measurements of semiconductor structures using optical near-field approach

Spectral measurements of semiconductor structures using optical near-field approach

Paper in proceedings (conference paper)

The measurements of local photoluminescence, local photocurrent on GaAs/AlGaAs quantum wells under ambient temperature 300 K have been performed. The level of the locally induced signal in function excitation energy, probe-sample distance and sample position has been studied. The method is relevant to the study of the local defects, to evaluate the aging process of devices.

The measurements of local photoluminescence, local photocurrent on GaAs/AlGaAs quantum wells under ambient temperature 300 K have been performed. The level of the locally induced signal in function excitation energy, probe-sample distance and sample position has been studied. The method is relevant to the study of the local defects, to evaluate the aging process of devices.

Semiconductor structures, quantum well, near-field, spectroscopy

Semiconductor structures, quantum well, near-field, spectroscopy

TOMÁNEK, P., BENEŠOVÁ, M., DOBIS, P., OTEVŘELOVÁ, D., GRMELA, L.

25.04.2002

KU Leuven, COST 523

Leuven, Belgie

Joint COST-Action workgroup meeting on individual and assembled nanoparticles and quantum dots

P55

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