Detail publikačního výsledku

Silicon-silicon dioxide nanostructure in electrostatic field

HRUŠKA, P.; GRMELA, L.

Original Title

Silicon-silicon dioxide nanostructure in electrostatic field

English Title

Silicon-silicon dioxide nanostructure in electrostatic field

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.

English abstract

Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined. Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.

Keywords

nanostructure, Si-SiO2 quantum dot, discharging bias, poisson-Schrödinger numerical analysis, Comsol Multiphysics

Key words in English

nanostructure, Si-SiO2 quantum dot, discharging bias, poisson-Schrödinger numerical analysis, Comsol Multiphysics

Authors

HRUŠKA, P.; GRMELA, L.

RIV year

2011

Released

14.09.2010

Publisher

TU Košice

Location

Košice

ISBN

1335-8243

Periodical

Acta Electrotechnica et Informatica

Volume

10

Number

3

State

Slovak Republic

Pages from

22

Pages to

25

Pages count

4

Full text in the Digital Library

http://hdl.handle.net/

BibTex

@article{BUT50849,
  author="Pavel {Hruška} and Lubomír {Grmela}",
  title="Silicon-silicon dioxide nanostructure in electrostatic field",
  journal="Acta Electrotechnica et Informatica",
  year="2010",
  volume="10",
  number="3",
  pages="22--25",
  issn="1335-8243"
}