Publication result detail

Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

MAŠEK, K.; VÁCLAVŮ, M.; BÁBOR, P.; MATOLÍN, V.

Original Title

Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

English Title

Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Sn addition in the CeO2 thin film by simultaneous Sn metal and cerium oxide magnetron sputtering causes growth of Ce3+ rich films whilst pure cerium oxide sputtering provides stoichiometric CeO2 layers. Ce4+ - Ce3+ conversion is explained by a charge transfer from Sn atoms to unoccupied orbital Ce 4f0 of cerium oxide by forming Ce 4f1 state. XPS and SIMS revealed a formation of a new chemical Ce(Sn)+ state, which belongs to SnCeO2 species.

English abstract

Sn addition in the CeO2 thin film by simultaneous Sn metal and cerium oxide magnetron sputtering causes growth of Ce3+ rich films whilst pure cerium oxide sputtering provides stoichiometric CeO2 layers. Ce4+ - Ce3+ conversion is explained by a charge transfer from Sn atoms to unoccupied orbital Ce 4f0 of cerium oxide by forming Ce 4f1 state. XPS and SIMS revealed a formation of a new chemical Ce(Sn)+ state, which belongs to SnCeO2 species.

Keywords

Cerium oxide; Tin-cerium mixed oxide; SIMS; XPS; Magnetron sputtering

Key words in English

Cerium oxide; Tin-cerium mixed oxide; SIMS; XPS; Magnetron sputtering

Authors

MAŠEK, K.; VÁCLAVŮ, M.; BÁBOR, P.; MATOLÍN, V.

RIV year

2010

Released

15.04.2009

ISBN

0169-4332

Periodical

APPLIED SURFACE SCIENCE

Volume

255

Number

13-14

State

Kingdom of the Netherlands

Pages from

6656

Pages to

6660

Pages count

5

BibTex

@article{BUT47187,
  author="Karel {Mašek} and Michal {Václavů} and Petr {Bábor} and Vladimír {Matolín}",
  title="Sn-CeO2 thin films prepared by rf magnetron sputtering: XPS and SIMS study",
  journal="APPLIED SURFACE SCIENCE",
  year="2009",
  volume="255",
  number="13-14",
  pages="6656--6660",
  issn="0169-4332"
}