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TOMÁNEK, P.; ŠKARVADA, P.; MACKŮ, R.; GRMELA, L.
Original Title
Detection and localization of defects in monocrystalline silicon solar cell
English Title
Type
Peer-reviewed article not indexed in WoS or Scopus
Original Abstract
Near-surface defects in solar cell wafer have undesirable influence upon device properties, as its efficiency and lifetime. When reverse-bias voltage is applied to the wafer, a magnitude of electric signals from defects can be measured electronically, but the localization of defects is difficult using classical optical far-field methods. Therefore, the paper introduces a novel combination of electric and optical methods showing promise of being useful in detection and localization of defects with resolution of 250nm using near-field nondestructive characterization techniques. The results of mapped topography, local surface reflection, and local light to electric energy conversion measurement in areas with small defects strongly support the development and further evaluation of the technique.
English abstract
Keywords
Defect, optoelectronic device, solar cells, near-field
Key words in English
Authors
RIV year
2011
Released
01.06.2010
Publisher
Hindawi Publishing Corporation
Location
New York, USA
ISBN
1687-6393
Periodical
Advances in Optical Technologies
Volume
2010
Number
805325
State
United States of America
Pages from
8053251
Pages to
8053255
Pages count
5
Full text in the Digital Library
http://hdl.handle.net/
BibTex
@article{BUT46975, author="Pavel {Tománek} and Pavel {Škarvada} and Robert {Macků} and Lubomír {Grmela}", title="Detection and localization of defects in monocrystalline silicon solar cell", journal="Advances in Optical Technologies", year="2010", volume="2010", number="805325", pages="8053251--8053255", issn="1687-6393" }