Publication result detail

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

MACH, J.; ČECHAL, J.; KOLÍBAL, M.; POTOČEK, M.; ŠIKOLA, T.

Original Title

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

English Title

Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

English abstract

The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and possibly by temperature.

Keywords

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

Key words in English

Gallium, Ga; Silicon, Si(100); Hydrogen; Surface structure; Nanoclusters; Low energy electron diffraction (LEED); Synchrotron radiation photoelectron spectroscopy (SR-PES); Photoemission

Authors

MACH, J.; ČECHAL, J.; KOLÍBAL, M.; POTOČEK, M.; ŠIKOLA, T.

RIV year

2010

Released

15.05.2008

ISBN

0039-6028

Periodical

SURFACE SCIENCE

Volume

602

Number

10

State

Kingdom of the Netherlands

Pages from

1898

Pages to

1902

Pages count

5

BibTex

@article{BUT46749,
  author="Jindřich {Mach} and Jan {Čechal} and Miroslav {Kolíbal} and Michal {Potoček} and Tomáš {Šikola}",
  title="Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface",
  journal="SURFACE SCIENCE",
  year="2008",
  volume="602",
  number="10",
  pages="1898--1902",
  issn="0039-6028"
}