Publication result detail

Low-frequency noise measurements used for semiconductor light active devices

VANĚK, J., CHOBOLA, Z.

Original Title

Low-frequency noise measurements used for semiconductor light active devices

English Title

Low-frequency noise measurements used for semiconductor light active devices

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.

English abstract

Three different sets of semiconductors light active devices were by low noise diagnostic described. In the first set the low frequency noise of 2.3 microm CW GaSb based laser diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured.

Key words in English

Noise spectroscopy

Authors

VANĚK, J., CHOBOLA, Z.

Released

24.05.2005

ISBN

0277-786X

Periodical

Proceedings of SPIE

Volume

2005

Number

5844

State

United States of America

Pages from

86

Pages count

8

BibTex

@article{BUT46285,
  author="Jiří {Vaněk} and Zdeněk {Chobola} and Vladimír {Brzokoupil} and Jiří {Kazelle}",
  title="Low-frequency noise measurements used for semiconductor light active devices",
  journal="Proceedings of SPIE",
  year="2005",
  volume="2005",
  number="5844",
  pages="8",
  issn="0277-786X"
}