Publication detail

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

CHOBOLA, Z. VANĚK, J. KAZELLE, J.

Original Title

Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes

Type

journal article - other

Language

English

Original Abstract

Transport and noise characteristic of forward biased 2.3 microm CW GaSb laser diodes were measured in order to evaluate new technology. From the measurement results it follows hat noise spectral density related to defect is of 1/f type and its magnitude was found to be proportional to the squere of DC forwrd current at low infection levels.

Key words in English

Noise, Laser Diodes

Authors

CHOBOLA, Z.; VANĚK, J.; KAZELLE, J.

RIV year

2005

Released

19. 9. 2005

Location

Spain

ISBN

0094-243X

Periodical

AIP conference proceedings

Year of study

2005

Number

780

State

United States of America

Pages from

721

Pages to

724

Pages count

4

BibTex

@article{BUT45527,
  author="Zdeněk {Chobola} and Jiří {Vaněk} and Jiří {Kazelle}",
  title="Noise and I-V Characteristic as Characterization Tools for GaSb base Laser Diodes",
  journal="AIP conference proceedings",
  year="2005",
  volume="2005",
  number="780",
  pages="4",
  issn="0094-243X"
}