Publication result detail

ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

KOLÍBAL, M.; PRŮŠA, S.; BÁBOR, P.; ŠIKOLA, T.

Original Title

ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

English Title

ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Paper deals with a ToF-LEIS Analysis of ultra thin films, Ga and Ga-N layer growth on Si(111)

English abstract

Paper deals with a ToF-LEIS Analysis of ultra thin films, Ga and Ga-N layer growth on Si(111)

Key words in English

ToF, LEIS, Ga, GaN, silicon

Authors

KOLÍBAL, M.; PRŮŠA, S.; BÁBOR, P.; ŠIKOLA, T.

Released

01.01.2004

ISBN

0039-6028

Periodical

SURFACE SCIENCE

Volume

566-568

Number

9

State

Kingdom of the Netherlands

Pages from

885

Pages count

5

BibTex

@article{BUT42358,
  author="Miroslav {Kolíbal} and Stanislav {Průša} and Petr {Bábor} and Tomáš {Šikola}",
  title="ToF-LEIS Analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)",
  journal="SURFACE SCIENCE",
  year="2004",
  volume="566-568",
  number="9",
  pages="5",
  issn="0039-6028"
}