Publication result detail

Local spectroscopy by scanning near-field optical microscopy

LÉTAL, P., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Original Title

Local spectroscopy by scanning near-field optical microscopy

English Title

Local spectroscopy by scanning near-field optical microscopy

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

English abstract

The photoluminescence (PL) spectroscopy has for a long time been established as a very efficient, nondestructive technique for the evaluation of semiconductor materials and heterostructures. At room temperature, the band-gap-energy of ternary and quaternary epitaxial layers can be determined from the position of the PL peak, and the half-width of the PL curve is correlated with the free-carrier concentration. Both these parameters are important for the preparation of new epitaxial layers and structures for optoelectronic devices and applications. The comparison of PL obtained in the Near-field optical region and corresponding electroluminescent spectra in the Far-field from diodes based on investigated material helps to analyze the relative contributions - of the material luminescence (PL), and - the wave-guiding properties of the heterostructure, to the spectrum emitted from the diode edge.

Keywords

photoluminescence, local characteristics, SNOM,

Key words in English

photoluminescence, local characteristics, SNOM,

Authors

LÉTAL, P., TOMÁNEK, P., DOBIS, P., BRÜSTLOVÁ, J., GRMELA, L.

Released

02.05.1998

ISBN

1210-2717

Periodical

Inženýrská mechanika - Engineering Mechanics

Volume

5

Number

3

State

Czech Republic

Pages from

215

Pages count

4

BibTex

@article{BUT41424,
  author="Petr {Létal} and Pavel {Tománek} and Pavel {Dobis} and Jitka {Brüstlová} and Lubomír {Grmela}",
  title="Local spectroscopy by scanning near-field optical microscopy",
  journal="Inženýrská mechanika - Engineering Mechanics",
  year="1998",
  volume="5",
  number="3",
  pages="4",
  issn="1210-2717"
}