Přístupnostní navigace
E-application
Search Search Close
Publication result detail
TOMÁNEK, P.; BENEŠOVÁ, M.; DOBIS, P.; OTEVŘELOVÁ, D.; GRMELA, L.; KAWATA, S.
Original Title
Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution
English Title
Type
WoS Article
Original Abstract
Characteristic rate variations of carrier processes are imaged using near-field scanning optical microscopy. We couple both a visible pump and an infrared probe light through a subwavelength aperture to investigate the interband recombination and intraband diffusion of excess carriers in oxidized silicon. Typical values of the locally measured life time constants agree well with those obtained by conventional space-averaged techniques. Moreover, the images locate defects, reveal variations, and can map the regions in which a recombination process is active.
English abstract
Keywords
near-field optics, semiconductor, carrier dynamics, superresolution
Key words in English
Authors
Released
15.07.2003
Publisher
V S V CO
Location
Moscow, Russia
ISBN
0204-3467
Periodical
Physics of low-dimensional structures
Volume
2003
Number
3/4
State
United States of America
Pages from
131
Pages to
137
Pages count
7
BibTex
@article{BUT41400, author="Pavel {Tománek} and Markéta {Benešová} and Pavel {Dobis} and Dana {Otevřelová} and Lubomír {Grmela} and Satoshi {Kawata}", title="Near-field optical diagnostics of carrier dynamics in semiconductor with superresolution", journal="Physics of low-dimensional structures", year="2003", volume="2003", number="3/4", pages="131--137", issn="0204-3467" }