Publication result detail

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

PAZDERA, L.

Original Title

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

English Title

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

English abstract

Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s

Key words in English

model, low-frequency noise , LDD MOSFET´s

Authors

PAZDERA, L.

Released

01.01.1997

ISBN

0741-3106

Periodical

IEEE ELECTRON DEVICE LETTERS

Volume

1997

Number

5

State

United States of America

Pages from

480

Pages count

3

BibTex

@article{BUT41385,
  author="Luboš {Pazdera}",
  title="Empirical model for the low-frequency noise of hot-carrier degraded submicron LDD MOSFET´s",
  journal="IEEE ELECTRON DEVICE LETTERS",
  year="1997",
  volume="1997",
  number="5",
  pages="3",
  issn="0741-3106"
}